Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

//Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance
By Hafiz M. W. Khalil, Muhammad Farooq Khan, Jonghwa Eom and Hwayong Noh

ACS Applied Materials & InterfacesDOI: 10.1021/acsami.5b06825

Published in: "Applied Materials and Interfaces".

2015-10-13T20:16:58+00:00 October 13th, 2015|Categories: Publications|Tags: |
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