Dynamic Reconstruction of Two‐Dimensional Defective Bi Nanosheets for Efficient Electrocatalytic Urea Synthesis

2024-02-23T13:08:10+00:00February 23rd, 2024|Categories: Publications|Tags: , |

Catalyst surface dynamics drive the generation of active species for electrocatalytic reactions. Yet, the understanding of dominant site formation and reaction mechanisms is limited. In this study, we thoroughly investigate the dynamic reconstruction of two-dimensional defective Bi nanosheets from exfoliated Bi2Se3 nanosheets under electrochemical CO2 and nitrate (NO3-) reduction conditions. The ultrathin Bi2Se3 nanosheets obtained by NaBH4-assisted cryo-mediated liquid-phase exfoliation are more easily reduced and reconstructed to Bi nanosheets with high-density grain boundaries (GBs; GB-rich Bi). The reconstructed GB-rich Bi catalyst affords a remarkable yield rate of 4.6 mmol h-1 mgcat.-1 and Faradaic efficiency of 32% for urea production at −0.40 V vs. RHE. Notably, this yield rate is 2 and 8.2 times higher than those of the low-GB Bi and bulk Bi catalysts, respectively. Theoretical analysis demonstrates that the GB sites significantly reduce the *CO and *NH2 intermediate formation energy and C-N coupling energy barrier, enabling selective urea electrosynthesis on the GB-rich Bi catalyst. This work will trigger further research into the structure–activity interplay in dynamic processes using in situ techniques.

Published in: "Angewandte Chemie International Edition".

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$. (arXiv:2306.00827v1 [cond-mat.mtrl-sci])

2023-06-02T02:29:50+00:00June 2nd, 2023|Categories: Publications|Tags: |

With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by inherent structural defects that donate electrons and make the bulk conductive. Consequently, controlling these defects is of great interest for future technological applications, and while past literature has focused on adding external doping elements to the mixture, a complete study on undoped Bi2Se3 was still lacking. In this work, we use the self-flux method to obtain high-quality Bi2Se3 single-crystals in the entire concentration range available on the phase-diagram for the technique. By combining basic structural characterization with measurements of the resistivity, Hall effect and Shubnikov-de Haas (SdH) quantum oscillations, the effects of these impurities on the bulk transport are investigated in samples with electron densities ranging from 10^17 cm^-3 to 10^19 cm^-3, from Se-rich to Bi-rich mixtures, respectively, evidencing the transition into a degenerate semiconductor regime. We find that electron-donor impurities, likely Se vacancies, unavoidably shift the Fermi level up to 200 meV inside the conduction band. Other impurities, like interstitial Bi and Se, are shown to play a significant role as scattering centres, specially at low temperatures and in the decoherence of the SdH oscillations. Previous open questions on Bi2Se3, such as the upturn in resistivity below 30 K, the different scattering times in transport and quantum oscillations, and the presence of additional low mobility bands, are addressed. The results outlined here

Published in: "arXiv Material Science".

Emergence of Three-fold Symmetric Helical Photocurrents in Epitaxial Low Twinned Bi$_2$Se$_3$. (arXiv:2303.07808v1 [cond-mat.mes-hall])

2023-03-15T04:30:28+00:00March 15th, 2023|Categories: Publications|Tags: |

We observe enhanced three-fold symmetric helicity-dependent topological photocurrents using time-domain THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. It is established how twinned crystal domains introduce competing responses that obscure inherent nonlinear optical responses of the intrinsic crystal structure. Minimizing this defect reveals strong nonlinear optical response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the three-fold rotational symmetry of the crystal structure. Notably, the azimuthal dependence of the photoresponse persists for helical excitations – an unprecedented result we attribute to the photon drag effect, where the photon momentum acts as an applied in-plane field that is stationary in the laboratory frame. Additionally, the sign of the resultant THz signal inverts when the helicity of incident light is switched from right to left circularly polarized, indicating a reversal of the photocurrent. Our results demonstrate that even extended domain defects can obscure intrinsic physical processes, making the study of single domain thin films crucial to the observation of phenomena that couple topological order and crystal symmetries.

Published : "arXiv Mesoscale and Nanoscale Physics".

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces. (arXiv:2303.05808v1 [cond-mat.mtrl-sci])

2023-03-13T02:29:30+00:00March 13th, 2023|Categories: Publications|Tags: , , , |

Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating ultra-thin thermal metamaterials based on crystalline lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m^2K/GW) and ultralow cross-plane thermal conductivities (0.01-0.07 Wm^-1K^-1) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.

Published in: "arXiv Material Science".

Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator. (arXiv:2303.00296v1 [cond-mat.str-el])

2023-03-02T02:29:36+00:00March 2nd, 2023|Categories: Publications|Tags: , |

The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler’s rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (~ 0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3.

Published in: "arXiv Material Science".

Exchange-Driven Intermixing of Bulk and Topological Surface State by Chiral Excitons in Bi2Se3. (arXiv:2302.11056v1 [cond-mat.mtrl-sci])

2023-02-23T02:29:29+00:00February 23rd, 2023|Categories: Publications|Tags: |

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi2Se3 are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi2Se3. We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light.

Published in: "arXiv Material Science".

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates. (arXiv:2302.10985v1 [cond-mat.mtrl-sci])

2023-02-23T02:29:28+00:00February 23rd, 2023|Categories: Publications|Tags: , |

Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi2Se3 and Sb2Te3 structures on ultra-thin In2Se3 layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In2Se3 provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime.

Published in: "arXiv Material Science".

Development of a Laser-based angle-resolved-photoemission spectrometer with sub-micrometer spatial resolution and high-efficiency spin detection. (arXiv:2301.12835v1 [cond-mat.mtrl-sci])

2023-01-31T02:29:45+00:00January 31st, 2023|Categories: Publications|Tags: |

Angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution ({mu}-ARPES), has become a powerful tool for studying quantum materials. To achieve sub-micrometer or even nanometer-scale spatial resolution, it is important to focus the incident light beam (usually from the synchrotron radiation) using X-ray optics such as the zone plate or ellipsoidal capillary mirrors. Recently, we developed a laser-based {mu}-ARPES with spin-resolution (LMS-ARPES). The 177 nm laser beam is achieved by frequency doubling a 355 nm beam using a KBBF crystal and subsequently focused using an optical lens with a focal length of about 16 mm. By characterizing the focused spot size using different methods and performing spatial-scanning photoemission measurement, we confirm the sub-micron spatial resolution of the system. Compared with the {mu}-ARPES facilities based on synchrotron radiation, our LMS-ARPES system is not only more economical and convenient but also with higher photon flux (> 5E13 photons/s), thus enabling the high-resolution and high-statistics measurements. Moreover, the system is equipped with a two-dimensional spin detector based on exchange scattering at a surface-passivated iron film grown on a W(100) substrate. We investigate the spin structure of the prototype topological insulator Bi2Se3 and reveal a high spin-polarization rate, confirming its spin-momentum locking property. This lab-based LMS-ARPES will be a powerful research tool for studying the local fine electronic structures of different condensed matter systems, including topological quantum materials, mesoscopic materials and structures, and phase-separated materials.

Published in: "arXiv Material Science".

Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature. (arXiv:2301.06266v1 [cond-mat.mes-hall])

2023-01-18T04:30:46+00:00January 18th, 2023|Categories: Publications|Tags: |

The unique spin texture of quantum states in topological materials underpins many proposed spintronic applications. However, realizations of such great potential are stymied by perturbations, such as temperature and local fields imposed by impurities and defects, that can render a promising quantum state uncontrollable. Here, we report room-temperature observation of interaction between Rashba states and topological surface states, which manifests unique spin textures controllable by layer thickness of thin films. Specifically, we combine scanning tunneling microscopy/spectroscopy with the first-principles theoretical calculation to find the robust Rashba states coexisting with topological surface states along the surface steps with characteristic spin textures in momentum space. The Rashba edge states can be switched off by reducing the thickness of a topological insulator Bi2Se3 to bolster their interaction with the hybridized topological surface states. The study unveils a manipulating mechanism of the spin textures at room temperature, reinforcing the necessity of thin film technology in controlling quantum states.

Published : "arXiv Mesoscale and Nanoscale Physics".

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures. (arXiv:2301.02321v1 [cond-mat.mes-hall])

2023-01-09T02:29:22+00:00January 9th, 2023|Categories: Publications|Tags: , , , |

The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions, and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications.

Published in: "arXiv Material Science".

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6. (arXiv:2301.01120v1 [cond-mat.supr-con])

2023-01-04T02:29:56+00:00January 4th, 2023|Categories: Publications|Tags: , |

Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression above 30 GPa, a new superconducting state arises, where pressure raises the Tc to an unsaturated 6.0 K within the limit of our research. Combining XRD and Raman spectroscopies, we suggest that the emergence of two distinct superconducting states occurs concurrently with the pressure-induced structural transition in this topological heterostructure (PbSe)5(Bi2Se3)6.

Published in: "arXiv Material Science".

Anisotropic Light-Matter Interactions in Single Crystal Topological Insulator Bismuth Selenide. (arXiv:2301.00350v1 [cond-mat.mtrl-sci])

2023-01-03T02:29:21+00:00January 3rd, 2023|Categories: Publications|Tags: |

Anisotropy of light-matter interactions in materials give remarkable information about the phonons and their interactions with electrons. We report the angle-resolved polarized Raman spectroscopy of single-crystal of Bi2Se3 to obtain the elements of Raman tensor for understanding the strength of polarization along different crystallographic orientations. Intensity variation in the polar plots corresponding to E_g^1 ~ 37 cm-1, A_1g^1 ~71 cm-1, E_g^2 ~ 130 cm-1, and A_1g^2 ~ 173 cm-1 suggests the higher differential polarizability along cross-plane (bc-plane). The polar patterns and the differences in elements of the Raman tensor provides the evidence of the fundamental electron-phonon and anisotropic light matter interactions in Bi2Se3.

Published in: "arXiv Material Science".

Observation of ultraslow hole dynamics in the 3D topological insulator Bi2Se3 coated with a thin MgF2 layer using multiphoton pumped UV-Vis transient absorption spectroscopy. (arXiv:2212.02386v1 [cond-mat.mes-hall])

2022-12-06T04:30:33+00:00December 6th, 2022|Categories: Publications|Tags: |

Individual relaxation dynamics of electrons and holes in optically pumped semiconductors is rarely observed due to their overlap. Here we report the individual dynamics of long-lived (~200 mks) holes observed at room temperature in a 10 nm thick film of the 3D topological insulator (TI) Bi2Se3 coated with a 10 nm thick MgF2 layer using transient absorption spectroscopy in the UV-Vis region. The ultraslow hole dynamics was observed by applying multiphoton resonant pumping of massless Dirac fermions and bound valence electrons in Bi2Se3 at a certain wavelength sufficient for their photoemission and subsequent trapping at the Bi2Se3/MgF2 interface. The emerging deficit of electrons in the film makes it impossible for the remaining holes to recombine, thus causing their ultraslow dynamics measured at a specific probing wavelength. We also found an extremely long rise time (~600 ps) for this ultraslow optical response, which is due to the large spin-orbit coupling (SOC) splitting at the valence band maximum and the resulting intervalley scattering between the splitting components. The ultraslow hole dynamics in Bi2Se3 due to the presence of the Bi2Se3/MgF2 interface is nevertheless much faster than the known ultraslow electron dynamics at the Si/SiO2 interface, also induced by multiphoton excitation in Si. The observed dynamics of long-lived holes is gradually suppressed with decreasing Bi2Se3 film thickness for the 2D TI Bi2Se3 (film thickness 5, 4, and 2 nm) due to the loss of resonance conditions for multiphoton photoemission caused by the gap opening at the Dirac surface state nodes. This behavior indicates

Published : "arXiv Mesoscale and Nanoscale Physics".

Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure. (arXiv:2211.01211v1 [cond-mat.mes-hall])

2022-11-03T04:30:29+00:00November 3rd, 2022|Categories: Publications|Tags: , |

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSS has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lifts the time-reversal symmetry. Here we report an experimental evidence of exchange interaction between a topological insulator Bi2Se3 and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of SQUID magnetometry and Hall measurements points to the formation of an antiferromagnetic layer with at least five-fold enhancement of N’eel’s temperature. Abrupt resistance changes in high magnetic fields indicate interfacial exchange coupling that affects transport in a TSS. High temperature local control of TSS with zero net magnetization unlocks new opportunities for the design of electronic, spintronic and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.

Published : "arXiv Mesoscale and Nanoscale Physics".

Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator. (arXiv:2209.07666v1 [cond-mat.mes-hall])

2022-09-19T04:30:13+00:00September 19th, 2022|Categories: Publications|Tags: , |

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

Published : "arXiv Mesoscale and Nanoscale Physics".

Dirac bands in the topological insulator Bi2Se3 mapped by time-resolved momentum microscopy. (arXiv:2207.09789v1 [cond-mat.mtrl-sci])

2022-07-21T02:29:18+00:00July 21st, 2022|Categories: Publications|Tags: , |

We have studied the energy dispersion of the Dirac bands of the topological insulator Bi2Se3 at large parallel momenta using a setup for laser-based time-resolved momentum microscopy with 6 eV probe-photons. Using this setup, we can probe the manifold of unoccupied states up to higher intermediate-state energies in a wide momentum window. We observe a strongly momentum-dependent evolution of the topologically protected Dirac states into a conduction band resonance, highlighting the anisotropy dictated by the surface symmetry. Our results are in remarkable agreement with the theoretical surface spectrum obtained from a GW-corrected tight-binding model, suggesting the validity of the approach in the prediction of the quasiparticle excitation spectrum of large systems with non-trivial topology. After photoexcitation with 0.97 eV photons, assigned to a bulk valence band-conduction band transition, the out-of-equilibrium population of the surface state evolves on a multi-picosecond time scale, in agreement with a simple thermodynamical model with a fixed number of particles, suggesting a significant decoupling between bulk and surface states.

Published in: "arXiv Material Science".

Tunable Optical Field Aided Quantum Spin Hall Phase in Bi2Se3Thin Film. (arXiv:2207.02899v1 [cond-mat.mes-hall])

2022-07-08T04:30:28+00:00July 8th, 2022|Categories: Publications|Tags: , |

We show fledgling quantum spin Hall (QSH) phase by the normal incidence of circularly polarized infra-optical field (CPOF)on Bi2Se3 doped with magnetic impurities. For this purpose, we start with a low-energy two-dimensional, time-dependent Hamiltonian H(k,t). The time dependence in H arises due to CPOF describable by the gauge field associated with CPOF. We make use of the Floquet theory in the high-frequency limit to investigate the system. The optical field tuneability leads to the emergence of QSH phase, when intensity of the incident radiation is high, from the quantum anomalous Hall phase. Interestingly, the former phase is achievable here even in the presence of the magnetic impurities.

Published : "arXiv Mesoscale and Nanoscale Physics".

Tunable Optical Field Aided Quantum Spin Hall Phase in Bi2Se3Thin Film. (arXiv:2207.02899v1 [cond-mat.mes-hall])

2022-07-08T02:29:30+00:00July 8th, 2022|Categories: Publications|Tags: , |

We show fledgling quantum spin Hall (QSH) phase by the normal incidence of circularly polarized infra-optical field (CPOF)on Bi2Se3 doped with magnetic impurities. For this purpose, we start with a low-energy two-dimensional, time-dependent Hamiltonian H(k,t). The time dependence in H arises due to CPOF describable by the gauge field associated with CPOF. We make use of the Floquet theory in the high-frequency limit to investigate the system. The optical field tuneability leads to the emergence of QSH phase, when intensity of the incident radiation is high, from the quantum anomalous Hall phase. Interestingly, the former phase is achievable here even in the presence of the magnetic impurities.

Published in: "arXiv Material Science".

Thickness-Dependent Magneto Transport of Bi2Se3/SiO2 Topological Insulator thin films. (arXiv:2207.01212v1 [cond-mat.mtrl-sci])

2022-07-05T02:29:23+00:00July 5th, 2022|Categories: Publications|Tags: |

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate the surface and bulk-related behaviour with different thicknesses. The deposited films are characterized through GI-XRD (grazing incidence X-ray diffractometer) and Raman spectroscopy, which ensure the impurity less deposition. Further, the transport properties are investigated, which shows thickness dependence of weak anti-localization effect (WAL) in the system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson insulator (TAI).

Published in: "arXiv Material Science".

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy. (arXiv:2206.15453v1 [cond-mat.mtrl-sci])

2022-07-01T02:29:29+00:00July 1st, 2022|Categories: Publications|Tags: |

Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.

Published in: "arXiv Material Science".

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