SnS2

/Tag: SnS2

Effective lattice Hamiltonian for monolayer tin disulfide: Tailoring electronic structure with electric and magnetic fields

2018-06-12T16:33:34+00:00 June 12th, 2018|Categories: Publications|Tags: |

Author(s): Jin Yu, Edo van Veen, Mikhail I. Katsnelson, and Shengjun YuanThe electronic properties of monolayer tin dilsulfide (ML−SnS2), a recently synthesized metal dichalcogenide, are studied by a combination of first-principles calculations and tight-binding (TB) approximation. An effective lattice Hamiltonian based on six hybrid sp-like orbitals with trigonal rotati…[Phys. Rev. B 97, 245410] Published Tue Jun 12, 2018

Published in: "Physical Review B".

Enhanced light trapping and high charge transmission capacities of novel structure for efficient photoelectrochemical water splitting

2018-05-29T12:50:36+00:00 May 29th, 2018|Categories: Publications|Tags: |

Nanoscale, 2018, Accepted ManuscriptDOI: 10.1039/C8NR03040E, PaperJianglong Mu, Hui Miao, Enzhou Liu, Juan Feng, Feng Teng, Dekai Zhang, Yumeng Kou, Yanping Jin, Jun Fan, Xiaoyun HuAn excellent PEC efficiency, good reusability, and super stability of trap-like SnS2/TiO2 nanotube arrays (NTs) photoanode is reported. Specifically,

Published in: "RSC Nanoscale".

Enhanced light trapping and high charge transmission capacities of novel structure for efficient photoelectrochemical water splitting

2018-05-29T12:50:36+00:00 May 29th, 2018|Categories: Publications|Tags: |

Nanoscale, 2018, Accepted ManuscriptDOI: 10.1039/C8NR03040E, PaperJianglong Mu, Hui Miao, Enzhou Liu, Juan Feng, Feng Teng, Dekai Zhang, Yumeng Kou, Yanping Jin, Jun Fan, Xiaoyun HuAn excellent PEC efficiency, good reusability, and super stability of trap-like SnS2/TiO2 nanotube arrays (NTs) photoanode is reported. Specifically,

Published in: "RSC Nanoscale".

High efficiency electrochemical reduction of CO2 beyond two-electron transfer pathway on grain boundary rich ultra-small SnO2 nanoparticles

2018-05-03T09:18:01+00:00 May 3rd, 2018|Categories: Publications|Tags: |

J. Mater. Chem. A, 2018, Accepted ManuscriptDOI: 10.1039/C8TA01367E, PaperChenglu Liang, Byoungsu Kim, Shize Yang, Yang Liu, Cristiano Woellner, Zhengyuan Li, Robert Vajtai, Wei Yang, Jingjie Wu, Paul J.A. Kenis, Pulickel M. AjayanWell crystallized and interconnected SnO2 nanoparticles (< 5 nm) were synthesized via

Published in: "Journal of Materials Chemistry A".

Nucleation and growth mechanism of 2D SnS 2 by chemical vapor deposition: initial 3D growth followed by 2D lateral growth

2018-04-10T14:30:42+00:00 April 10th, 2018|Categories: Publications|Tags: |

Tin disulfide (SnS 2 ) is a n-type semiconductor with a hexagonally layered crystal structure and has promising applications in nanoelectronics, optoelectronics and sensors. Such applications require the deposition of SnS 2 with controlled crystallinity and thickness control at monolayer level on large area substrate. Here, we investigate the nucleation and growth mechanism of two-dimensional (2D) SnS 2 by chemical vapor deposition (CVD) using SnCl 4 and H 2 S as precursors. We find that the growth mechanism of 2D SnS 2 is different from the classical layer-by-layer growth mode, by which monolayer-thin 2D transition metal dichalcogenides can be formed. In the initial nucleation stage, isolated 2D SnS 2 domains of several monolayers high are formed. Next, 2D SnS 2 crystals grow laterally while keeping a nearly constant height until layer closure is achieved, due to the higher reactivity of SnS 2

Published in: "2DMaterials".

Effective lattice Hamiltonian for monolayer tin disulphide: tailoring electronic structure with electric and magnetic fields. (arXiv:1804.01909v1 [physics.comp-ph])

2018-04-06T19:59:01+00:00 April 6th, 2018|Categories: Publications|Tags: , |

The electronic properties of monolayer tin dulsulphide (ML-SnS2), a recently synthesized metal dichalcogenide, are studied by a combination of first-principles calculations and tight-binding (TB) approximation. An effective lattice Hamiltonian based on six hybrid sp-like orbitals with trigonal rotation symmetry are proposed to calculate the band structure and density of states for ML-SnS2, which demonstrates good quantitative agreement with relativistic density functional theory calculations in a wide energy range. We show that the proposed TB model can be easily applied to the case of an external electric field, yielding results consistent with those obtained from full Hamiltonian results. In the presence of a perpendicular magnetic field, highly degenerate equidistant Landau levels are obtained, showing typical two-dimensional electron gas behavior. Thus, the proposed TB model provides a simple new way in describing novel properties in ML-SnS2.

Published in: "arXiv Material Science".

Three-dimensional self-assembled [email protected] Hybrid Aerogel as an Efficient Polysulfide Reservoir for High-performance Lithium-sulfur Batteries

2018-04-03T13:18:02+00:00 April 3rd, 2018|Categories: Publications|Tags: , |

J. Mater. Chem. A, 2018, Accepted ManuscriptDOI: 10.1039/C8TA01089G, PaperLiu Luo, Sheng-Heng Chung, Arumugam ManthiramReliable sulfur cathodes hold the key to realize high-performance lithium-sulfur (Li-S) batteries, yet the electrochemical inefficiency and instability arising from the poor conductivity of sulfur and lithium sulfide together with…The

Published in: "Journal of Materials Chemistry A".

Fabrication of high crystalline SnS and SnS 2 thin films, and their switching device characteristics

2018-03-27T10:31:23+00:00 March 27th, 2018|Categories: Publications|Tags: |

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide t…

Published in: "Nanotechnology".

Rational Microstructure Design of SnS2-Carbon Composites for Superior Sodium Storage Performance

2018-03-22T14:24:23+00:00 March 22nd, 2018|Categories: Publications|Tags: , |

Nanoscale, 2018, Accepted ManuscriptDOI: 10.1039/C8NR01783B, PaperYi Zhao, Binbin Guo, QianQian Yao, Jiaxin Li, Jianshuo Zhang, Kun Hou, Lunhui GuanSodium ion batteries (SIBs) have attracted ever-growing attention as promising candidates for large-scale energy storage applications, due to the abundant sodium resources and its low

Published in: "RSC Nanoscale".

The use of the Rietveld method and pairs distribution function analysis to study the pressure dependence of the trigonal SnSe2 and SnS2 structure. (arXiv:1803.05430v1 [cond-mat.mtrl-sci])

2018-03-16T19:59:35+00:00 March 16th, 2018|Categories: Publications|Tags: |

A nanostructured trigonal SnSe2 was produced by mechanical alloying, and the effect of high-pressures up to 25.8 GPa on it was investigated. The literature reports refined structural data for SnS2 for pressures up to 20 GPa. These data were used as input data in a crystallographic software to calculate the shell structures around the Sn, Se, and S atoms placed at the origin. The shell structures were used to simulate the partial and total structure factors Sij(K) and S(K), and by Fourier transformation the partial and total pairs distribution functions Gij(R) and G(R) were obtained. The effect of high-pressure on the SnSe2 and SnS2 structures were followed by observing the changes in the Gij(R) functions. Also, the effect of high-pressure on the smallest angle Sn-X (X=Se,S)-Sn, intralayer distance Sn-X (X=Se,S), and interlayers distance X-X (X=Se,S) was studied. The interlayers distance X-X (X=Se,S) changes faster than the intralayer distance Sn-X (X=Se,S). An enhancement of the average power factor at 20 GPa and 800 K for SnS2 was reported. Using the interlayers distance S-S and intralayer distance Sn-S, it was evidenced that the enhancement of average power factor may be associated with the changes of the interlayers distance S-S that is faster than that of the intralayer distance Sn-S.

Published in: "arXiv Material Science".

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