Dimensional crossover and symmetry transformation of the charge density waves in VSe2. (arXiv:2302.10031v1 [cond-mat.mes-hall])

2023-02-21T04:30:34+00:00February 21st, 2023|Categories: Publications|Tags: |

Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single layer to the bulk reveals the evolution of the electronic structure including the Fermi surface contours and the CDW gap. At a thickness of two layers, the ARPES maps are already nearly bulklike, but the transition temperature TC for the (4 x 4) CDW is much higher than the bulk value of 110 K. These results can be understood as a result of dimensional crossover of phonon instability driven by a competition of nesting vectors. Our study provides key insights into the CDW mechanisms and offers a perspective in the search and control of emergent phases in quantum materials.

Published : "arXiv Mesoscale and Nanoscale Physics".

Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials. (arXiv:2211.05353v1 [cond-mat.mtrl-sci])

2022-11-11T02:29:56+00:00November 11th, 2022|Categories: Publications|Tags: |

The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe2, FeCl2, and CrI3 bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produce a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.

Published in: "arXiv Material Science".

Multi band Fermi surface in 1T-VSe2 and its implication for charge density wave phase. (arXiv:2209.10054v1 [cond-mat.mtrl-sci])

2022-09-22T02:29:24+00:00September 22nd, 2022|Categories: Publications|Tags: |

Here, our angle resolved photoemission spectroscopy experiment reveled that the surface band structure of the 1T-VSe2 host electronic states that was not predicted or probed before. Earlier claims to support charge density wave phase can be all explained in terms of these new findings. Its Fermi surface found to be not gaped at any point of the Brillouin zone and warping effect on the electronic structure, attributed to the lattice distortion previously, is due to the different dispersion of the multiple bands. Based on these new findings and interpretations, charge density wave induced modification on the electronic structure of 1T-VSe2 needs to be reconstructed in the future studies.

Published in: "arXiv Material Science".

Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator. (arXiv:2207.04755v1 [cond-mat.mtrl-sci])

2022-07-12T02:29:36+00:00July 12th, 2022|Categories: Publications|Tags: , |

We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few nanometres in diameter) exhibiting the characteristic superstructure of the charge density wave (CDW) state of pristine VSe2 monolayer remain visible on most of the sample surface. Thus alloying preserves the short range order of the CDW phase, although it destroys its long range order. For higher Pt concentration (x=0.35) a disordered alloy forms. It presents a fully developped gap (a few tens meV in width) at the Fermi level and is thus a disordered insulator. This gap exhibits strong variations at the nanometer scale, reflecting the local fluctuations in the composition. An unexpectedly large interaction of the TMD layer with the graphene substrate sets in for this composition range.

Published in: "arXiv Material Science".

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet. (arXiv:2206.02427v1 [cond-mat.mtrl-sci])

2022-06-07T02:29:42+00:00June 7th, 2022|Categories: Publications|Tags: |

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

Published in: "arXiv Material Science".

Magnetic Transition in Monolayer VSe2 via Interface Hybridization. (arXiv:2206.02429v1 [cond-mat.mtrl-sci])

2022-06-07T02:29:28+00:00June 7th, 2022|Categories: Publications|Tags: |

Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Via interfacial hybridization with Co atomic overlayer, a magnetic moment of about 0.4 uB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/MLMoSe2 interface, these findings at the Co/ML-VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition.

Published in: "arXiv Material Science".

Possible structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2 under uniaxial stress. (arXiv:2204.07910v1 [cond-mat.mtrl-sci])

2022-04-19T04:30:46+00:00April 19th, 2022|Categories: Publications|Tags: , |

2D semiconducting transition metal dichalcogenides have been used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconducting property were found in 2D VSe$_2$ nanoflakes (mechanically exfoliated onto silicon substrates capped with a oxide layer) and are attributed to the stable 2H-phase of VSe$_2$ in the 2D limit. Here, our first-principles investigation show that a metastable semiconducting H’ phase can be formed from the H VSe2 monolayer and some other similar when these 2D H-phase materials are under uniaxial stress or uniaxial strain. For the uniaxial stress (uniaxial strain) scheme, the H’ phase will become lower in total energy than the H phase at the transition point. The calculated phonon spectra indicate the dynamical stability of the H’ structures of VSe$_2$, VS$_2$, and CrS$_2$, and the path of phase switching between the H and H’ VSe$_2$ phases is calculated. For VSe$_2$, the H’ phase has stronger ferromagnetism and its Currier temperature can be substantially enhanced by applying uniaxial stress or strain. Spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H’ phases can be substantially changed by the applied uniaxial stress or strain, leading to huge effective masses near the band edge of the strained H’ phase. Analysis indicated that the largest bond length difference between the H’ and H phases can reach -19% for the Se3-Se3′ bond, and there is noticeable covalence for the Se3-Se3′ bond, which switches the valence of the nearby V atoms, leading to the enhanced

Published : "arXiv Mesoscale and Nanoscale Physics".

Possible structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2 under uniaxial stress. (arXiv:2204.07910v1 [cond-mat.mtrl-sci])

2022-04-19T02:29:33+00:00April 19th, 2022|Categories: Publications|Tags: , |

2D semiconducting transition metal dichalcogenides have been used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconducting property were found in 2D VSe$_2$ nanoflakes (mechanically exfoliated onto silicon substrates capped with a oxide layer) and are attributed to the stable 2H-phase of VSe$_2$ in the 2D limit. Here, our first-principles investigation show that a metastable semiconducting H’ phase can be formed from the H VSe2 monolayer and some other similar when these 2D H-phase materials are under uniaxial stress or uniaxial strain. For the uniaxial stress (uniaxial strain) scheme, the H’ phase will become lower in total energy than the H phase at the transition point. The calculated phonon spectra indicate the dynamical stability of the H’ structures of VSe$_2$, VS$_2$, and CrS$_2$, and the path of phase switching between the H and H’ VSe$_2$ phases is calculated. For VSe$_2$, the H’ phase has stronger ferromagnetism and its Currier temperature can be substantially enhanced by applying uniaxial stress or strain. Spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H’ phases can be substantially changed by the applied uniaxial stress or strain, leading to huge effective masses near the band edge of the strained H’ phase. Analysis indicated that the largest bond length difference between the H’ and H phases can reach -19% for the Se3-Se3′ bond, and there is noticeable covalence for the Se3-Se3′ bond, which switches the valence of the nearby V atoms, leading to the enhanced

Published in: "arXiv Material Science".

Exchange Bias and Interface-related Effects in Two-dimensional van der Waals Magnetic Heterostructures: Open Questions and Perspectives. (arXiv:2201.00479v1 [cond-mat.mtrl-sci])

2022-01-04T02:30:31+00:00January 4th, 2022|Categories: Publications|Tags: , , |

The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe3GeTe2) to a bilayer composed of two different magnetic vdW materials (e.g., Fe3GeTe2/CrCl3, Fe3GeTe2/FePS3, Fe3GeTe2/MnPS3), to bilayers of two different vdW defective magnets (e.g., VSe2/MoS2), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS2). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. We present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.

Published in: "arXiv Material Science".

Hidden electronic order in 1T-VSe2. (arXiv:2110.04666v1 [cond-mat.mtrl-sci])

2021-10-12T02:30:11+00:00October 12th, 2021|Categories: Publications|Tags: |

Here, we study the surface electronic structure of 1T-VSe2 by means of angle resolved photoemission spectroscopy and uncover a dispersion-less emission located in the vicinity of the Fermi level. Its crystal momentum dependency reveals that it occupies large portions of the Brillouin zone (BZ), where no bulk band is expected. Upon electron doping (deposition of Rb-atoms), the system evolves in a surprising way. Besides the expected down-shifting of the bands, a splitting of both bulk and the dispersion-less emission is observed. This peculiar behaviour strongly suggests the intrinsic nature of this emission. Its characterization may therefore be relevant to a deeper understanding of the physics of transition metal dichalcogenides.

Published in: "arXiv Material Science".

Lattice dynamics of photoexcited insulators from constrained density-functional perturbation theory. (arXiv:2106.11709v1 [cond-mat.mtrl-sci])

2021-06-23T02:29:30+00:00June 23rd, 2021|Categories: Publications|Tags: , |

We present a constrained density functional perturbation theory scheme for the calculation of structural and harmonic vibrational properties of insulators in the presence of an excited and thermalized electron-hole plasma. The method is ideal to tame ultrafast light induced structural transitions in the regime where the photocarriers thermalize faster than the lattice, the electron-hole recombination time is longer than the phonon period and the photocarrier concentration is large enough to be approximated by an electron-hole plasma. The complete derivation presented here includes total energy, forces and stress tensor, variable cell structural optimization, harmonic vibrational properties and the electron-phonon interaction. We discuss in detail the case of zone center optical phonons not conserving the number of electrons and inducing a Fermi shift in the photo-electron and hole distributions. We validate our implementation by comparing with finite differences in Te and VSe2. By calculating the evolution of the phonon spectrum of Te, Si and GaAs as a function of the fluence of the incoming laser light, we demonstrate that even at low fluences, corresponding to approximately 0.1 photocarriers per cell, the phonon spectrum is substantially modified with respect to the ground state one with new Kohn anomalies appearing and a substantial softening of zone center optical phonons. Our implementation can be efficiently used to detect reversible transient phases and irreversible structural transition induced by ultrafast light absorption.

Published in: "arXiv Material Science".

Ferromagnetism in 2D Vanadium Diselenide. (arXiv:2104.07937v1 [cond-mat.mtrl-sci])

2021-04-19T02:29:25+00:00April 19th, 2021|Categories: Publications|Tags: |

Two-dimensional (2D) Van der Waals ferromagnets carry the promise of ultimately miniature spintronics and information storage devices. Among the newly discovered 2D ferromagnets all inherit the magnetic ordering from their bulk ancestors. Here we report a new 2D ferromagnetic semiconductor at room temperature, 2H phase vanadium diselenide (VSe2) which show ferromagnetic at 2D form only. This unique 2D ferromagnetic semiconductor manifests an enhanced magnetic ordering owing to structural anisotropy at 2D limit.

Published in: "arXiv Material Science".

Pressure-induced 1T to 3R structural phase transition in metallic VSe2: X-ray diffraction and first-principles theory. (arXiv:2102.01560v1 [cond-mat.mtrl-sci])

2021-02-03T02:29:47+00:00February 3rd, 2021|Categories: Publications|Tags: |

We study pressure-induced structural evolution of vanadium diselenide (VSe2), a 1T polymorphic member of the transition metal di-chalcogenide (TMD) family using synchrotron-based powder X-ray diffraction (PXRD) and first-principles density functional theory (DFT). Our XRD results reveal anomalies at P ~4 GPa in c/a ratio, V-Se bond length and Se-V-Se bond angle signalling an isostructural transition. This is followed by a first order structural transition from 1T (space group P-3m1) phase to a 3R (space group R-3m) phase at P ~11 GPa due to sliding of adjacent Se-V-Se layers. We present various scenarios to understand the experimental results within DFT and find that the 1T to 3R transition can be captured only after inclusion of enthalpic correction associated with errors in cell volume with underestimated transition pressure. The abrupt increase in the Debye-Waller factors of Se atoms by a factor of ~4 and hence the anharmonic effects across the structural transition pressure are hitherto not reported so far and hint a possible way to understand the mismatch between the experimental and theoretical transition pressure values.

Published in: "arXiv Material Science".

Controllable phase transitions between multiple charge density wave in monolayer 1T-VSe2 via doping and strain engineering. (arXiv:2011.03692v1 [cond-mat.mtrl-sci])

2020-11-10T02:29:47+00:00November 10th, 2020|Categories: Publications|Tags: |

Two-dimensional materials are known to possess emergent properties that are not found in their bulk counterparts. Recent experiments have shown a $sqrt7 times sqrt3$ charge density wave (CDW) in monolayer 1T-VSe2, in contrast to the $4times 4times 3$ phase in bulk. In this work, via first-principles calculations, we show that multiple CDW phases compete in monolayer VSe2, and the ground state of which can be tuned by charge doping and in-plane biaxial strain. With doping, phase transitions occur from the $sqrt7 times sqrt3$ CDW of the pristine VSe2 to a $3 times sqrt3$ and to a $4times 4$ phase, which is a projection from the bulk counterpart, at critical doping concentrations of around 0.2 hole per formula unit and 0.25 electron per formula unit, respectively. The $4times 4$ CDW phase can also be stabilized under compressive strain. The phase transitions can be well understood by Fermi surface nesting. These results make VSe2 an appealing material for electronic devices based on controllable CDW phase transitions.

Published in: "arXiv Material Science".

Spin-dependent Tunneling Barriers in CoPc/VSe2 from Many-Body Interactions. (arXiv:2010.14012v1 [cond-mat.mtrl-sci])

2020-10-28T02:29:45+00:00October 28th, 2020|Categories: Publications|Tags: , , |

Mixed-dimensional magnetic heterostructures are intriguing, newly available platforms to explore quantum physics and its applications. Using state-of-the-art many-body perturbation theory, we predict the energy level alignment for a self-assembled monolayer of cobalt phthalocyanine (CoPc) molecules on magnetic VSe 2 monolayers. The predicted projected density of states on CoPc agrees with experimental scanning tunneling spectra. Consistent with experiment, we predict a shoulder in the unoccupied region of the spectra that is absent from mean-field calculations. Unlike the nearly spin-degenerate gas phase frontier molecular orbitals, the tunneling barriers at the interface are spin-dependent, a finding of interest for quantum information and spintronics applications. Both the experimentally observed shoulder and the predicted spin-dependent tunneling barriers originate from many-body interactions in the interface-hybridized states. Our results showcase the intricate many-body physics that governs the properties of these mixed-dimensional magnetic heterostructures, and suggests the possibility of manipulating the spin-dependent tunneling barriers through modifications of interface coupling.

Published in: "arXiv Material Science".

Confinement effect enhanced Stoner ferromagnetic instability in monolayer 1T-VSe2. (arXiv:2008.09562v1 [cond-mat.mtrl-sci])

2020-08-24T02:29:16+00:00August 24th, 2020|Categories: Publications|Tags: |

Monolayer 1T-VSe2 has been reported as a room-temperature ferromagnet. In this work, by using first-principles calculations, we unveil that the ferromagnetism in monolayer 1T-VSe2 is originated from its intrinsic huge Stoner instability enhanced by the confinement effect, which can eliminate the interlayer coupling, and lead to a drastic increase of the density of states at the Fermi level due to the presence of Van Hove singularity. Our calculations also demonstrate that the Stoner instability is very sensitive to the interlayer distance. These results provide a useful route to modulate the nonmagnetic to ferromagnetic transition in few-layers or bulk 1T-VSe2, which also shed light on the enhancement of its Curie temperature by enlarging the interlayer distance.

Published in: "arXiv Material Science".

Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique. (arXiv:2007.14167v1 [cond-mat.mtrl-sci])

2020-07-29T02:29:23+00:00July 29th, 2020|Categories: Publications|Tags: , , , , , , |

Due to their outstanding properties and promises for future technology in energy generation, transition metal dichalcogenides (TMDs) have gathered a lot of interest in recent years. Amongst this class of materials TMDs based on molybdenum, tungsten, sulfur and selenium gathered a lot attention because of their semiconducting properties and the possibility to be synthesized by bottom up techniques. Here, using an evaporation of metal-saturated chalcogen melt at 850-655 deg., we were able to obtain, from their solid solutions, a high quality crystals of transition metal diselenide and ditelluride crystals like (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2). Additionally, we show the possibility to synthesize crystals of rare-earth metal polychalcogenides and NbS2. Most of the obtained crystals have a layered CdI2 structure. We, further, have investigated the basic physical properties of some selected obtained crystals. These investigations reflect the good quality of the obtained crystals. Remarkably, the charge density wave transition in both 1T-TiSe2 and 2H-NbSe2 crystals shows a clear sign at 200 K and 33 K, respectively. Angle-resolved photoemission spectroscopy and electron diffractions techniques are used to directly access the electronic and crystalline properties of PtTe2 single crystals.

Published in: "arXiv Material Science".

Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system. (arXiv:2006.13447v1 [cond-mat.mtrl-sci])

2020-06-25T02:29:29+00:00June 25th, 2020|Categories: Publications|Tags: , , , |

Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moir’e patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.

Published in: "arXiv Material Science".

Theoretical investigation on magnetic property of monolayer CrI3 from microscale to macroscale. (arXiv:2004.00468v1 [physics.comp-ph])

2020-04-02T02:29:18+00:00April 2nd, 2020|Categories: Publications|Tags: |

Magnetic two-dimensional (2D) materials have received tremendous attention recently due to its potential application in spintronics and other magnetism related fields. To our knowledge, five kinds of 2D materials with intrinsic magnetism have been synthesized in experiment. They are CrI3, Cr2Ge2Te6, FePS3, Fe3GeTe2 and VSe2. Apart from the above intrinsic magnetic 2D materials, many strategies have also been proposed to induce magnetism in normal 2D materials such as atomic modification, spin valve and proximity effect. Various devices have also been designed to fulfill the basic functions of spintronics: inducing spin, manipulating spin and detecting spin.

Published in: "arXiv Material Science".

Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants. (arXiv:2002.07333v1 [cond-mat.mtrl-sci])

2020-02-19T02:29:24+00:00February 19th, 2020|Categories: Publications|Tags: , |

One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature. Two-dimensional van der Waals semiconductors have been recently investigated to demonstrate the magnetic order in DMSs; however, a comprehensive understanding of the mechanism responsible for the gate-tunable long-range magnetic order in DMSs has not been achieved yet. Here, we introduce a monolayer tungsten diselenide (WSe2) semiconductor with V dopants to demonstrate the long-range magnetic order through itinerant spin-polarized holes. The V atoms are sparsely located in the host lattice by substituting W atoms, which is confirmed by scanning tunneling microscopy and high-resolution transmission electron microscopy. The V impurity states and the valence band edge states are overlapped, which is congruent with density functional theory calculations. The field-effect transistor characteristics reveal the itinerant holes within the hybridized band; this clearly resembles the Zener model. Our study gives an insight into the mechanism of the long-range magnetic order in V-doped WSe2, which can also be used for other magnetically doped semiconducting transition metal dichalcogenides.

Published in: "arXiv Material Science".

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