By Toru Kanazawa, Tomohiro Amemiya, Atsushi Ishikawa, Vikrant Upadhyaya, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto 2D materials are expected to be favorable channel materials for field-effect
transistor (FET) with extremely short channel length because of their superior
immunity to short-channel effects (SCE). Graphene, which is the most famous 2D
material, has no bandgap without additional techniques and this property is
major hindrance in reducing the drain leakage. Therefore, 2D …read more
Published in: arXiv Material Science
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