Gate dielectric production technology for 2D material electronics

A collaboration between, Duke and Seattle Universities with IBM demonstrate a new method to produce high quality gate dielectrics for 2D material electronics.

The production method relies on the use of atomic layer deposition (ALD) and overcomes one of the most important aspects of gate dielectrics: homogeneity.  Traditional films produced by ALD suffer from non-uniformity, since at low thicknesses materials tend to nucleate and produces islands instead of uniform films.

The researchers established that a plasma-assisted growth process overcomes this hurdle and allows for uniform gate dielectric at under 5nm thickness. The devices, demonstrated by using a  molybdenum disulfide channel, demonstrate low leakage current and strong gate control.

Read more: “Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS₂ Using Plasma-Enhanced Atomic Layer Deposition” Price et al. ACS Applied Materials & Interfaces 2017