Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures. (arXiv:1802.03508v1 [cond-mat.mtrl-sci])

Home » Publications » Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures. (arXiv:1802.03508v1 [cond-mat.mtrl-sci])

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zrn+1CnT2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/{AA} electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

Published in: "arXiv Material Science".

2018-02-13T19:59:26+00:00 February 13th, 2018|Categories: Publications|Tags: , |
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