Nanoscale, 2018, Accepted ManuscriptDOI: 10.1039/C8NR03570A, CommunicationHyunjin Ji, Yi Hojoon, jinbong seok, Hyun Kim, Young Hee Lee, seong chu limDirect current (DC) and low-frequency (LF) noise analyses of chemical vapor deposition (CVD)-grown monolayer MoS2 field effect transistor (FET) indicate that time-varying carrier perturbations originate

Published in: "RSC Nanoscale".