High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions. (arXiv:1807.07128v1 [cond-mat.mes-hall])

//High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions. (arXiv:1807.07128v1 [cond-mat.mes-hall])

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green’s functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analysed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low sub-threshold swings (below 5mV/decade) and Ion/Ioff ratios higher than 1e8 at a supply voltage of 0.3V, making them ideal for ultra-low power consumption.

Published : "arXiv Mesoscale and Nanoscale Physics".

2018-07-20T00:30:24+00:00July 20th, 2018|Categories: Publications|Tags: , , |
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