Gate-tunable weak antilocalization in a few-layer InSe

//Gate-tunable weak antilocalization in a few-layer InSe

Author(s): Junwen Zeng, Shi-Jun Liang, Anyuan Gao, Yu Wang, Chen Pan, Chenchen Wu, Erfu Liu, Lili Zhang, Tianjun Cao, Xiaowei Liu, Yajun Fu, Yiping Wang, Kenji Watanabe, Takashi Taniguchi, Haizhou Lu, and Feng MiaoIndium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Here we report the gate voltage and temperat…[Phys. Rev. B 98, 125414] Published Tue Sep 18, 2018

Published in: "Physical Review B".

2018-09-18T16:33:13+00:00September 18th, 2018|Categories: Publications|Tags: |
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