Low temperature photoconductivity of few layer p -type tungsten diselenide (WSe 2 ) field-effect transistors (FETs)

//Low temperature photoconductivity of few layer p -type tungsten diselenide (WSe 2 ) field-effect transistors (FETs)

We report on the low-temperature photoconductive properties of few layer p -type tungsten diselenide (WSe 2 ) field-effect transistors (FETs) synthesized using the chemical vapor transport method. Photoconductivity measurements show that these FETs display room temperature photo-responsivities of ∼7 mAW −1 when illuminated with a laser of wavelength λ = 658 nm with a power of 38 nW. The photo-responsivities of these FETs showed orders of magnitude improvement (up to ∼1.1 AW −1 with external quantum efficiencies reaching as high as ∼188%) upon application of a gate voltage ( V G  = −60 V). A temperature dependent (100K < T < 300 K) photoconductivity study reveals a weak temperature dependence of responsivity for these WSe 2 phototransistors. We demonstrate that it is possible to obtain stable photo-responsivities of ∼0.76 ± 0.2 AW −1 (with applied V G = −60 V), at low tem…

Published in: "Nanotechnology".

2018-10-01T12:33:45+00:00October 1st, 2018|Categories: Publications|Tags: |
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