Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. (arXiv:1810.08927v1 [cond-mat.mes-hall])

//Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. (arXiv:1810.08927v1 [cond-mat.mes-hall])

To explore new constituents in two-dimensional materials and to combine their best in van der Waals heterostructures, are always in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in modern electronics. Herein, we introduce PbI2 into two-dimensional system by synthesizing PbI2 crystals down to atomic scale, and further assemble them with transition metal dichalcogenide monolayers, as a good demonstration of flexibly designing different types of band alignment and interlayer interactions in PbI2-based interfacial semiconductors. The photoluminescence of MoS2 is strongly enhanced in MoS2/PbI2 stacks, while a dramatic quenching of WS2 or WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these two-dimensional materials, but type I band alignment in MoS2/PbI2 stacks where fast-transferred charge carriers accumulate in the semiconductor with a smaller band gap and type II in WS2/PbI2 and WSe2/PbI2 stacks with separated electrons and holes. Our results demonstrate that MoS2, WS2, WSe2 monolayers with very similar electronic structures themselves, show distinct optical properties when interfacing with atomically thin PbI2 crystals, providing unprecedent capabilities to engineer and optimize the device performance based on two-dimensional heterostructures.

Published : "arXiv Mesoscale and Nanoscale Physics".

2018-10-23T04:30:27+00:00October 23rd, 2018|Categories: Publications|Tags: , , , |
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