Single layer MoS2 nanoribbon field effect transistor. (arXiv:1811.01390v1 [cond-mat.mes-hall])

//Single layer MoS2 nanoribbon field effect transistor. (arXiv:1811.01390v1 [cond-mat.mes-hall])

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias.

Published : "arXiv Mesoscale and Nanoscale Physics".

2018-11-06T04:30:35+00:00November 6th, 2018|Categories: Publications|Tags: |
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