Scalable high performance radio frequency electronics based on large domain bilayer MoS2Scalable high performance radio frequency electronics based on large domain bilayer MoS<sub>2</sub>, Published online: 14 November 2018; doi:10.1038/s41467-018-07135-8Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.

Published in: "Nature Communications".