Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials. (arXiv:1812.01970v1 [cond-mat.mes-hall])

//Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials. (arXiv:1812.01970v1 [cond-mat.mes-hall])

Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on the increase of their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides.

Published : "arXiv Mesoscale and Nanoscale Physics".

2018-12-06T04:30:17+00:00December 6th, 2018|Categories: Publications|Tags: , , |
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