Massless Dirac fermions in III-V semiconductor quantum wells. (arXiv:1812.02468v1 [cond-mat.mtrl-sci])

//Massless Dirac fermions in III-V semiconductor quantum wells. (arXiv:1812.02468v1 [cond-mat.mtrl-sci])

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a band gap vanishing in this structure. The temperature dependence of the conductivity at the charge neutrality point also evidences the massless Dirac fermions. Measurements of cyclotron resonance at different electron concentrations allow us to infer that the velocity of these massless Dirac fermions, $v_F=1.8cdot10^5$ m/s, is the lowest ever measured in two-dimensional systems.

Published in: "arXiv Material Science".

2018-12-07T02:29:20+00:00December 7th, 2018|Categories: Publications|
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