A MoS2–upconversion‐nanoparticle (UCNP) nanocomposite is used to fabricate near‐infrared (NIR) modulated photonic resistive‐switching memory. The heterostructure between the MoS2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR‐light‐controlled memory performance. Meanwhile, the as‐fabricated photonic memory array also displays high integration with photodetectors, and can thus be used to make a core component of bioinspired vision systems. Abstract Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near‐infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS2–NaYF4:Yb3+, Er3+ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS2 nanosheets. The heterostructure between the MoS2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR‐light‐controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo‐modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.

Published in: "Advanced Materials".