The effect of the uniaxial strain on the current-voltage characteristic of a typical armchair-graphene-nanoribbon-hBN heterostructure device is simulated numerically by employing the nearest neighbor tight-binding model and the nonequilibrium Green’s function formalism. Simulations reveal that the strain invariably reduces the current. Furthermore, applying strain in the armchair direction widens the main peak of current over a larger region in the bias voltage domain compared with the unstrained scenario. Finally, it is observed that the current decreases faster when the strain is applied in the armchair rather than the zigzag direction.

Published : "arXiv Mesoscale and Nanoscale Physics".