InSe‐capped graphene field effect transistors combine the photosensitivity of InSe with the unique electrical properties of graphene. The light‐induced charge transfer at the InSe/graphene interface can induce an increase or decrease of the carrier density in graphene and a light‐induced transition from a hole‐ to an electron‐carrier current, with potential for quantum metrology and miniaturized optical sensors and switches. Abstract The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the “post‐transition” metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n‐type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light‐induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate‐controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light‐induced charge transfer in gate‐tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.
Published in: "Advanced Functional Materials".