In article number 1805431, Qing Yang, Ye Zhou, Su‐Ting Han, and co‐workers demonstrate modulated heterosyntic plasticity based on a resistive memory device fabricated with MoSe2/Bi2Se3 heterostructured nanosheets. By modulating the synaptic plasticity between pre‐ and post‐neurons with near‐infrared light, the synaptic system displays more complicated functions.

Published in: "Small".