Vertical van der Waals (vdW) heterostructures made up of two or more 2D monolayer materials provide new opportunities for 2D devices. Herein, we study the electronic transport properties of vertical integration of 2D GeSe-phosphorene(GeSe–BP) heterostructure, using the nonequilibrium Green’s function formalism combined with the density-functional theory. The results reveal that the directional dependency and strain tunable transport anisotropic behavior appears in GeSe/BP-stacking vdW heterostructures. The current–voltage ( I – V ) characteristics indicate that the electric current propagates more easily through the perpendicular buckled direction ( Y ) than the linear atomic chain direction ( X ) in the low bias regime regardless of the GeSe–BP stacking, which is supported by the underlying electronic structures along Γ– Y and Γ– X lines. The anisotropic transmission spectra indicate an over 10 5 on/off ratio between the I …
Published in: "Nanotechnology".