arXiv Mesoscale and Nanoscale Physics

/arXiv Mesoscale and Nanoscale Physics

Generalized Voigt broadening due to thermal fluctuations of electromechanical nanosensors and molecular electronic junctions. (arXiv:1811.05486v1 [cond-mat.mes-hall])

2018-11-15T04:30:23+00:00November 15th, 2018|Categories: Publications|Tags: |

Graphene and other 2D materials give a platform for electromechanical sensing of biomolecules in aqueous, room temperature environments. The electronic current changes in response to mechanical deflection, indicating the presence of forces due to interactions with, e.g., molecular species. We develop illustrative models of these sensors in order to give explicit, compact expressions for the current and signal-to-noise ratio. Electromechanical structures have an electron transmission function that follows a generalized Voigt profile, with thermal fluctuations giving a Gaussian smearing analogous to thermal Doppler broadening in solution/gas-phase spectroscopic applications. The Lorentzian component of the profile comes from the contact to the electrodes. After providing an accurate approximate form of this profile, we calculate the mechanical susceptibility for a representative two-level bridge and the current fluctuations for electromechanical detection. These results give the underlying mechanics of electromechanical sensing in more complex scenarios, such as graphene deflectometry.

Published : "arXiv Mesoscale and Nanoscale Physics".

Visualizing Encapsulated Graphene, its Defects and its Charge Environment by Sub-Micrometer Resolution Electrical Imaging. (arXiv:1811.05912v1 [cond-mat.mes-hall])

2018-11-15T04:30:20+00:00November 15th, 2018|Categories: Publications|Tags: , , |

Devices made from two-dimensional (2D) materials such as graphene or transition metal dichalcogenides possess interesting electronic properties that can become accessible to experimental probes when the samples are protected from deleterious environmental effects by encapsulating them between hexagonal boron nitride (hBN) layers. While the encapsulated flakes can be detected through post-processing of optical images or confocal Raman mapping, these techniques lack the sub-micrometer scale resolution to identify tears, structural defects or impurities, which is crucial for the fabrication of high-quality devices. Here we demonstrate a simple method to visualize such buried flakes with sub-micrometer resolution, by combining Kelvin force probe microscopy (KPFM) with electrostatic force microscopy (EFM). KPFM, which measures surface potential fluctuations, is extremely effective in spotting charged contaminants within and on top of the heterostructure, making it possible to distinguish contaminated regions in the buried flake. When applying a tip bias larger than the surface potential fluctuations, EFM becomes extremely efficient in highlighting encapsulated flakes and their sub-micron structural defects. We show that these imaging modes, which are standard extensions of atomic force microscopy (AFM), are perfectly suited for locating encapsulated conductors, for visualizing nanometer scale defects and bubbles, and for characterizing their local charge environment.

Published : "arXiv Mesoscale and Nanoscale Physics".

Anderson-Bogoliubov and Carlson-Goldman modes in counterflow superconductors. The case study of a double monolayer graphene. (arXiv:1811.05899v1 [cond-mat.mes-hall])

2018-11-15T04:30:16+00:00November 15th, 2018|Categories: Publications|Tags: |

The impact of electron-hole pairing on the spectrum of plasma excitations of double layer systems is investigated. The approach accounts coupling of the scalar potential oscillations with fluctuations of the order parameter $Delta$. The theory is developed with reference to a double monolayer graphene. We find that the spectrum of antisymmetric (acoustic) plasma excitations contains a weakly damped mode below the gap $2Delta$ and a strongly damped mode above the gap. The lower mode can be interpreted as an analog of the Carlson-Goldman mode. This mode has an acoustic dispersion relation at small wave vectors and it saturates at the level $2Delta$ at large wave vectors. Its velocity is larger than the velocity of the Anderson-Bogoliubov mode $v_{AB}=v_F$/$sqrt{2}$, and it can be smaller as well as larger than the Fermi velocity $v_F$. The damping rate of this mode strongly increases under increase in temperature. Out-of-phase oscillations of the order parameters of two spin components are also analyzed. This part of the spectrum contains two modes one of which is recognized as the Anderson-Bogoliubov (phase) mode and the other, as the Schmid (amplitude) mode. With minor modifications the theory describes collective modes in the double bilayer graphene system as well.

Published : "arXiv Mesoscale and Nanoscale Physics".

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC. (arXiv:1811.04998v1 [cond-mat.mtrl-sci])

2018-11-14T04:30:27+00:00November 14th, 2018|Categories: Publications|Tags: , |

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both {mu}m- and mm scales.

Published : "arXiv Mesoscale and Nanoscale Physics".

Thermopower in an anisotropic two-dimensional Weyl semimetal. (arXiv:1811.04952v1 [cond-mat.mes-hall])

2018-11-14T04:30:24+00:00November 14th, 2018|Categories: Publications|Tags: |

We investigate the generation of an electric current from a temperature gradient in a two-dimensional Weyl semimetal with anisotropy, both in the presence and absence of a quantizing magnetic field. We show that the anisotropy leads to doping dependences of thermopower and thermal conductivities which are different from those in isotropic Dirac materials. Additionally, we find that a quantizing magnetic field in such systems leads to an interesting magnetic field dependence of the longitudinal thermopower, resulting in unsaturated thermoelectric coefficients. Thus the results presented here will serve as a guide in achieving high thermopower and thermoelectric figure-of-merit in graphene-based materials, as well as organic conductors such as $alpha$-BEDT-TTF$_2$I$_3$.

Published : "arXiv Mesoscale and Nanoscale Physics".

Photogalvanic currents in dynamically gapped Dirac materials. (arXiv:1811.04564v1 [cond-mat.mes-hall])

2018-11-13T04:30:36+00:00November 13th, 2018|Categories: Publications|Tags: |

We develop a microscopic theory of an unconventional photogalvanic effect in two-dimensional materials with the Dirac energy spectrum of the carriers of charge under strong driving. As a test bed, we consider a layer of a transition metal dichalcogenide, exposed to two different electromagnetic fields. The first pumping field is circularly-polarized, and its frequency exceeds the material bandgap. It creates an extremely nonequilibrium distribution of electrons and holes in one valley (K) and opens dynamical gaps, whereas the other valley (K’) remains empty due to the valley-dependent interband selection rules. The second probe field has the frequency much smaller than the material bandgap. It generates intraband perturbations of the nonequilibrium carriers density, resulting in the photogalvanic current due to the trigonal asymmetry of the dispersions. This current shows threshold-like behavior due to the dynamical gap opening and renormalizations of the density of states and velocity of quasiparticles.

Published : "arXiv Mesoscale and Nanoscale Physics".

Magnetic superconfinement of Dirac fermions zero-energy modes in bilayer graphene quantum dots. (arXiv:1811.04550v1 [cond-mat.mes-hall])

2018-11-13T04:30:35+00:00November 13th, 2018|Categories: Publications|Tags: , |

We show that in bilayer graphene it is possible to achieve a very restrictive confinement of the massless Dirac fermions zero-modes by using inhomogeneous magnetic fields. Specifically, we show that, using a suitable nonuniform magnetic fields, the wave function may be restricted to a specific region of the space, being forbidden all transmission probability to the contiguous regions. This allows to construct mesoscopic structures in bilayer graphene by magnetic fields configurations.

Published : "arXiv Mesoscale and Nanoscale Physics".

Manifestation of kinetic-inductance in spectrally-narrow terahertz plasmon resonances in thin-film Cd3As2. (arXiv:1811.04306v1 [physics.optics])

2018-11-13T04:30:31+00:00November 13th, 2018|Categories: Publications|Tags: , |

Three-dimensional (3D) semimetals have been predicted and demonstrated to have a wide variety of interesting properties associated with its linear energy dispersion. In analogy to two-dimensional (2D) Dirac semimetals, such as graphene, Cd3As2, a 3D semimetal, has shown ultra-high mobility, large Fermi velocity, and has been hypothesized to support plasmons at terahertz frequencies. In this work, we demonstrate synthesis of high-quality large-area Cd3As2 thin-films through thermal evaporation as well as the experimental realization of plasmonic structures consisting of periodic arrays of Cd3As2 stripes. These arrays exhibit sharp resonances at terahertz frequencies with associated quality-factors (Q) as high as ~ 3.7. Such spectrally-narrow resonances can be understood on the basis of a large kinetic-inductance, resulting from a long momentum scattering time, which in our films can approach ~1 ps at room-temperature. Moreover, we demonstrate an ultrafast tunable response through excitation of photo-induced carriers in optical pump / terahertz probe experiments. Our results evidence that the intrinsic 3D nature of Cd3As2 provides for a very robust platform for terahertz plasmonic applications. Overall, our observations pave a way for the development of myriad terahertz (opto) electronic devices based on Cd3As2 and other 3D Dirac semimetals, benefiting from strong coupling of terahertz radiation, ultrafast transient response, magneto-plasmon properties, etc. Moreover, the long momentum scattering time, thus large kinetic inductance in Cd3As2, also holds enormous potential for the re-design of passive elements such as inductors and hence can have a profound impact in the field of RF integrated circuits.

Published : "arXiv Mesoscale and Nanoscale Physics".

Scanning transmission electron microscopy under controlled low-pressure atmospheres. (arXiv:1811.04266v1 [cond-mat.mes-hall])

2018-11-13T04:30:29+00:00November 13th, 2018|Categories: Publications|Tags: |

Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we describe experiments carried out in a modified scanning TEM (STEM) instrument, based on the Nion UltraSTEM 100. In this instrument, the base pressure at the sample is around 2×10^-10 mbar, and can be varied up to 10^-6 mbar through introduction of gases directly into the objective area while maintaining atomic resolution imaging conditions. We show that air leaked into the microscope column during the experiment is efficient in cleaning graphene samples from contamination, but ineffective in damaging the pristine lattice. Our experiments also show that exposure to O2 and H2O lead to a similar result, oxygen providing an etching effect nearly twice as efficient as water, presumably due to the two O atoms per molecule. H2 and N2 environments have no influence on etching. These results show that the residual gas environment in typical TEM instruments can have a large influence on the observations, and show that chemical etching of carbon-based structures can be effectively carried out with oxygen.

Published : "arXiv Mesoscale and Nanoscale Physics".

Pressure induced magnetism in rotated graphene bilayers. (arXiv:1811.04238v1 [cond-mat.mes-hall])

2018-11-13T04:30:26+00:00November 13th, 2018|Categories: Publications|Tags: |

Using ab initio methods based on the density functional theory we show that rotated graphene bilayers at angles different from the magic ones can have an electronic spectrum similar to those by applying moderate external pressures. We find that for an angle of $5.08^{circ}$ and a pressure of 2.19 GPa the spin restricted spectrum displays a flat band at the Fermi level similar to the one found at magic angles. In addition, the spin unrestricted calculations show a correlated ferromagnetic ground state with a total magnetic moment of 3.7 $mu_{B}$ per unit cell being mostly localized in the AA stacking region of the Moir'{e} pattern. The possibility of antiferromagnetic order is considered but not calculated. Doping the system destroys the magnetic moments. The plausibility of BCS superconductivity in the doped system is analyzed.

Published : "arXiv Mesoscale and Nanoscale Physics".

Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors. (arXiv:1811.04687v1 [cond-mat.mes-hall])

2018-11-13T04:30:24+00:00November 13th, 2018|Categories: Publications|Tags: , |

We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling barrier width for electrons on different graphene layers of bilayer graphene, coupled with the fact that its Landau level wave functions are not equally distributed amongst the layers with a distribution that is reversed between the two valleys, lead to valley polarisation of the tunnelling current. We estimate that valley polarisation $sim 70%$ can be achieved in high quality devices at $B=1$ T. Moreover, we demonstrate that strong valley polarisation can be obtained both in the limit of strong-momentum conserving tunnelling and in lower quality devices where this constraint is lifted.

Published : "arXiv Mesoscale and Nanoscale Physics".

Phonon-induced giant linear-in-$T$ resistivity in magic angle twisted bilayer graphene: Ordinary strangeness. (arXiv:1811.04920v1 [cond-mat.mes-hall])

2018-11-13T04:30:21+00:00November 13th, 2018|Categories: Publications|Tags: |

We theoretically show that the recently fabricated flatband twisted bilayer graphene should have an extremely enhanced linear-in-temperature resistivity in the metallic regime with the resistivity magnitude increasing dramatically as the twist angle approaches the magic angle ($sim 1^{circ}$). The slope of the resistivity versus temperature could approach hundreds of ohms per kelvin with a very strong angle dependence, but with a rather weak dependence on the carrier density. This dramatic angle-tuned resistivity enhancement arises from the huge increase in the effective electron-phonon coupling in the system due to the suppression of graphene Fermi velocity induced by the flatband condition. Our calculated temperature dependence is reminiscent of the so-called `strange metal’ transport behavior except that it is arising from the ordinary electron-phonon coupling in a rather unusual parameter space due to the generic moir’e flatband structure of twisted bilayer graphene.

Published : "arXiv Mesoscale and Nanoscale Physics".

Laser writable high-K dielectric for van der Waals nano-electronics. (arXiv:1811.04829v1 [cond-mat.mes-hall])

2018-11-13T04:30:20+00:00November 13th, 2018|Categories: Publications|Tags: , , |

Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices.

Published : "arXiv Mesoscale and Nanoscale Physics".

Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure. (arXiv:1811.04706v1 [cond-mat.mes-hall])

2018-11-13T04:30:17+00:00November 13th, 2018|Categories: Publications|Tags: , , , |

Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the understanding of the ultrafast cross-layer charge transfer process in 2D heterostructures, mechanisms for the interfacial photocarrier recombination remain, to a large extent, unclear. Here, we investigate a heterostructure comprised of black phosphorus (BP) and molybdenum disulfide (MoS2), with a type-II band alignment. Interestingly, it is found that the photo-generated electrons in MoS2 (transferred from BP) exhibit an ultrafast lifetime of about 5 ps, significantly shorter than those of the constituent materials. By corroborating with the relaxation of photo-excited holes in BP, it is revealed that the ultrafast time constant is as a result of efficient Langevin recombination, where the high hole mobility of BP facilitates a large recombination coefficient (approximately 2×10^-10 m^2/s). In addition, broadband transient absorption spectroscopy confirms that the hot electrons transferred to MoS2 distribute over a broad energy range following an ultrafast thermalization. The rate of the interlayer Langevin recombination is found to exhibit no energy level dependence. Our findings provide essential insights into the fundamental photo-physics in type-II 2D heterostructures, and also provide useful guidelines for customizing photocarrier lifetimes of BP for high-speed photo-sensitive devices.

Published : "arXiv Mesoscale and Nanoscale Physics".

Spiral Fermi Surfaces in Quasicrystals and Twisted Bilayer Graphene: Signatures in Quantum Oscillations. (arXiv:1811.03652v1 [cond-mat.mes-hall])

2018-11-12T04:30:18+00:00November 12th, 2018|Categories: Publications|Tags: |

We show that electronic materials with quasiperiodic order can exhibit exotic “spiral Fermi surfaces” in two or three dimensions. These Fermi surfaces are self-intersecting, and characterized by a winding number of their surface tangent—a topological invariant—that is larger than one. Furthermore, we show that spiral Fermi surfaces can be probed directly through standard quantum oscillation experiments, arising from the semiclassical quantization of orbits. We compute the nature of the quantum oscillations in two experimentally relevant settings which give rise to spiral Fermi surfaces: a “nearly-free-electron” quasicrystal; and ang{30} twisted bilayer graphene.

Published : "arXiv Mesoscale and Nanoscale Physics".

Electron quantum metamaterials in van der Waals heterostructures. (arXiv:1811.03670v1 [cond-mat.mes-hall])

2018-11-12T04:30:17+00:00November 12th, 2018|Categories: Publications|Tags: |

In recent decades, scientists have developed the means to engineer synthetic periodic arrays with feature sizes below the wavelength of light. When such features are appropriately structured, electromagnetic radiation can be manipulated in unusual ways, resulting in optical metamaterials whose function is directly controlled through nanoscale structure. Nature, too, has adopted such techniques — for example in the unique coloring of butterfly wings — to manipulate photons as they propagate through nanoscale periodic assemblies. In this Perspective, we highlight the intriguing potential of designer sub-electron wavelength (as well as wavelength-scale) structuring of electronic matter, which affords a new range of synthetic quantum metamaterials with unconventional responses. Driven by experimental developments in stacking atomically layered heterostructures — e.g., mechanical pick-up/transfer assembly — atomic scale registrations and structures can be readily tuned over distances smaller than characteristic electronic length-scales (such as electron wavelength, screening length, and electron mean free path). Yet electronic metamaterials promise far richer categories of behavior than those found in conventional optical metamaterial technologies. This is because unlike photons that scarcely interact with each other, electrons in subwavelength structured metamaterials are charged, and strongly interact. As a result, an enormous variety of emergent phenomena can be expected, and radically new classes of interacting quantum metamaterials designed.

Published : "arXiv Mesoscale and Nanoscale Physics".

Rectifying properties in 90{deg} rotated bilayer black phosphorus nanojunction: A first principle study. (arXiv:1811.03523v1 [])

2018-11-09T04:30:38+00:00November 9th, 2018|Categories: Publications|Tags: , |

We explore the possibility of using van dar Waals bonded heterostructures of stacked together 2D bilayer black phosphorus (BP) for nanoscale device applications. The electronic property of BP in AA stacking and 90{deg} twisted is studied with density functional theory. Further, we study the homogeneous nanojunction architecture of BP to use its anisotropic properties. Using the first principle simulations along with NEGF approach, we calculate quantum transport properties of the nanojunction setup. The interlayer directionally dependent current characteristics are explained in different setups. Our result revealed that 90{deg} twisted nanojucntion device would be a potential rectifier despite having no p-n junction characteristic only due to the intrinsic anisotropy of the material, making tunneling between armchair- and zigzag-directional BP sheets asymmetric.

Published : "arXiv Mesoscale and Nanoscale Physics".

Light-induced anomalous Hall effect in graphene. (arXiv:1811.03522v1 [cond-mat.mes-hall])

2018-11-09T04:30:36+00:00November 9th, 2018|Categories: Publications|Tags: |

Many striking non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids, ranging from light-induced superconductivity to Floquet-engineered topological phases. These effects are expected to lead to dramatic changes in electrical transport, but can only be comprehensively characterized or functionalized with a direct interface to electrical devices that operate at ultrafast speeds. Here, we make use of laser-triggered photoconductive switches to measure the ultrafast transport properties of monolayer graphene, driven by a mid-infrared femtosecond pulse of circularly polarized light. The immediate goal of this experiment is to probe the transport signatures of a predicted photon-dressed topological band structure in graphene, similar to the one originally proposed by Haldane. We report the observation of an anomalous Hall effect in the absence of an applied magnetic field. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that directly reflect the dressed band structure expected from Floquet theory, including a ~60 meV wide plateau centered at the Dirac point. We find that when the Fermi level lies within this plateau, the anomalous Hall conductance approaches 2e^2/h.

Published : "arXiv Mesoscale and Nanoscale Physics".

Non equilibrium anisotropic excitons in atomically thin ReS$_2$. (arXiv:1811.03461v1 [cond-mat.mes-hall])

2018-11-09T04:30:35+00:00November 9th, 2018|Categories: Publications|

We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS$_2$ to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.

Published : "arXiv Mesoscale and Nanoscale Physics".

High thermoelectric performance in the hexagonal bilayer structure consisting of light boron and phosphorus elements. (arXiv:1811.03409v1 [cond-mat.mes-hall])

2018-11-09T04:30:33+00:00November 9th, 2018|Categories: Publications|Tags: |

Two-dimensional layered materials have attracted tremendous attentions due to their extraordinary physical and chemical properties. Using first-principles calculations and Boltzmann transport theory, we give an accurate prediction of the thermoelectric properties of boron phosphide (BP) bilayer, where the carrier relaxation time is treated within the framework of electron-phonon coupling. It is found that the lattice thermal conductivity of BP bilayer is much lower than that of its monolayer structure, which can be attributed to the presence of van der Waals interactions. On the other hand, the graphene-like BP bilayer shows very high carrier mobility with a moderate band gap of 0.88 eV. As a consequence, a maximum p-type ZT value of ~1.8 can be realized along the x-direction at 1200 K, which is amazingly high for systems consisting of light elements only. Moreover, we obtain almost identical p- and n-type ZT of ~1.6 along the y-direction, which is very desirable for fabrication of thermoelectric modules with comparative efficiencies. Collectively, these findings demonstrate great advantages of the layered structures containing earth-abundant elements for environment-friendly thermoelectric applications.

Published : "arXiv Mesoscale and Nanoscale Physics".

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