Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure. (arXiv:2305.16825v1 [cond-mat.mes-hall])

2023-05-29T04:30:25+00:00May 29th, 2023|Categories: Publications|Tags: , , |

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau can be achieved at room temperature in relatively modest magnetic fields. This phenomenon offers the prospect for the controlled manipulation of the quantum Hall effect at room temperature.

Published : "arXiv Mesoscale and Nanoscale Physics".

Lattice distortions, moir’e phonons, and relaxed electronic band structures in magic-angle twisted bilayer graphene. (arXiv:2305.16640v1 [cond-mat.mes-hall])

2023-05-29T04:30:21+00:00May 29th, 2023|Categories: Publications|Tags: |

In this work, we present a theoretical research on the lattice relaxations, phonon properties, and relaxed electronic structures in magic-angle twisted bilayer graphene (TBG). We construct a continuum elastic model in order to study the lattice dynamics of magic-angle TBG, where both in-plane and out-of-plane lattice displacements are take into account. The fully relaxed lattice structure calculated using such a model is in quantitative agreement with experimental measurements. Furthermore, we investigate the phonon properties in magic-angle TBG using the continuum elastic model, where both the in-plane and out-of-plane phonon modes are included and treated on equal footing. We identify different types of moir’e phonons including in-plane sliding modes, soft out-of-plane flexural modes, as well as out-of-plane breathing modes. The latter two types of phonon modes exhibit interesting monopolar, dipolar, quadrupolar, and octupolar-type out-of-plane vibration patterns. Additionally, we explore the impact of the relaxed moir’e superlattice structure on the electronic band structures of magic-angle TBG using an effective continuum model, which shows nearly exact agreement with those calculated using a microscopic atomistic tight-binding approach. Our work lays foundation for further studies on the electron-phonon coupling effects and their interplay with $e$-$e$ interactions in magic-angle TBG.

Published : "arXiv Mesoscale and Nanoscale Physics".

Strong magnetic proximity effect in Van der Waals heterostructures driven by direct hybridization. (arXiv:2305.16813v1 [cond-mat.mes-hall])

2023-05-29T04:30:18+00:00May 29th, 2023|Categories: Publications|Tags: , , |

We propose a new class of magnetic proximity effects based on the spin dependent hybridization between the electronic states at the Fermi energy in a non-magnetic conductor and the narrow spin split bands of a ferromagnetic insulator. Unlike conventional exchange proximity, we show this hybridization proximity effect has a very strong influence on the non-magnetic layer and can be further modulated by application of an electric field. We use DFT calculations to illustrate this effect in graphene placed next to a monolayer of CrI$_3$, a ferromagnetic insulator. We find strong hybridization of the graphene bands with the narrow conduction band of CrI$_3$ in one spin channel only. We show that our results are robust with respect to lattice mismatch and twist angle variations. Furthermore, we show that an out-of-plane electric field can be used to modulate the hybridization strength, paving the way for applications.

Published : "arXiv Mesoscale and Nanoscale Physics".

Spin and Charge Fluctuation Induced Pairing in ABCB Tetralayer Graphene. (arXiv:2305.14438v2 [cond-mat.supr-con] UPDATED)

2023-05-28T08:32:56+00:00May 28th, 2023|Categories: Publications|Tags: , |

Motivated by the recent experimental realization of ABCB stacked tetralayer graphene [Wirth et al., ACS Nano 16, 16617 (2022)], we study correlated phenomena in moir’e-less graphene tetralayers for realistic interaction profiles using an orbital resolved random phase approximation approach. We demonstrate that magnetic fluctuations originating from local interactions are crucial close to the van Hove singularities on the electron- and hole-doped side promoting layer selective ferrimagnetic states. Spin fluctuations around these magnetic states enhance unconventional spin-triplet, valley-singlet superconductivity with $f$-wave symmetry due to intervalley scattering. Charge fluctuations arising from long range Coulomb interactions promote doubly degenerate $p$-wave superconductivity close to the van Hove singularities. At the conduction band edge of ABCB graphene, we find that both spin and charge fluctuations drive $f$-wave superconductivity. Our analysis suggests a strong competition between superconducting states emerging from long- and short-ranged Coulomb interactions and thus stresses the importance of microscopically derived interaction profiles to make reliable predictions for the origin of superconductivity in graphene based heterostructures.

Published : "arXiv Mesoscale and Nanoscale Physics".

Valley-dependent transport property of Stone–Wales and blister defects in graphene. (arXiv:2305.15726v1 [cond-mat.mes-hall])

2023-05-28T08:32:24+00:00May 28th, 2023|Categories: Publications|Tags: |

Valleytronics, which makes use of the two valleys in graphenes, attracts much attention and the valley filter is expected to be central component in valleytronics. We investigate valley-dependent transport properties of the Stone-Wales (SW) and blister defects of graphenes by density functional theory calculations. It is found that the intervalley transition is perfectly suppressed in some structures although the intravalley scattering occurs by the defect states of the SW or blister defects. Using the tight-binding model, the perfect suppression of the intervalley transition in the SW and blister defects is explained by the sublattice symmetry between the A and B sites of the bipartite honeycomb lattice. In addition, introducing the additional carbon atoms to graphenes to form blister defects, the defect states appear near the Fermi level and the energies where the resonant scattering occurs on the $mathrm{K}$ and $mathrm{K}^prime$ channel electrons split. Making use of this splits, the valley-dependent transport property will be achieved by local application of a gate voltage.

Published : "arXiv Mesoscale and Nanoscale Physics".

Valley-dependent transport property of Stone–Wales and blister defects in graphene. (arXiv:2305.15726v1 [cond-mat.mes-hall])

2023-05-28T08:32:23+00:00May 28th, 2023|Categories: Publications|Tags: |

Valleytronics, which makes use of the two valleys in graphenes, attracts much attention and the valley filter is expected to be central component in valleytronics. We investigate valley-dependent transport properties of the Stone-Wales (SW) and blister defects of graphenes by density functional theory calculations. It is found that the intervalley transition is perfectly suppressed in some structures although the intravalley scattering occurs by the defect states of the SW or blister defects. Using the tight-binding model, the perfect suppression of the intervalley transition in the SW and blister defects is explained by the sublattice symmetry between the A and B sites of the bipartite honeycomb lattice. In addition, introducing the additional carbon atoms to graphenes to form blister defects, the defect states appear near the Fermi level and the energies where the resonant scattering occurs on the $mathrm{K}$ and $mathrm{K}^prime$ channel electrons split. Making use of this splits, the valley-dependent transport property will be achieved by local application of a gate voltage.

Published : "arXiv Mesoscale and Nanoscale Physics".

Programmable Nanowrinkle-Induced Room-Temperature Exciton Localization in Monolayer WSe2. (arXiv:2305.15506v1 [cond-mat.mes-hall])

2023-05-28T08:32:15+00:00May 28th, 2023|Categories: Publications|Tags: , |

Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced super-wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. Detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from these fine wrinkles, and show that the states can be tightly confined to regions < 10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.

Published : "arXiv Mesoscale and Nanoscale Physics".

Programmable Nanowrinkle-Induced Room-Temperature Exciton Localization in Monolayer WSe2. (arXiv:2305.15506v1 [cond-mat.mes-hall])

2023-05-28T08:32:14+00:00May 28th, 2023|Categories: Publications|Tags: , |

Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced super-wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. Detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from these fine wrinkles, and show that the states can be tightly confined to regions < 10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.

Published : "arXiv Mesoscale and Nanoscale Physics".

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature. (arXiv:2305.15433v1 [cond-mat.mes-hall])

2023-05-28T08:32:04+00:00May 28th, 2023|Categories: Publications|Tags: |

Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $sim 70~mu$m, suggesting that thin films of graphite — or multilayer AB graphene stacks — can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.

Published : "arXiv Mesoscale and Nanoscale Physics".

Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature. (arXiv:2305.15433v1 [cond-mat.mes-hall])

2023-05-28T08:32:05+00:00May 28th, 2023|Categories: Publications|Tags: |

Graphite has been intensively studied, yet its electron spins dynamics remains an unresolved problem even 70 years after the first experiments. The central quantities, the longitudinal ($T_1$) and transverse ($T_2$) relaxation times were postulated to be equal, mirroring standard metals, but $T_1$ has never been measured for graphite. Here, based on a detailed band structure calculation including spin-orbit coupling, we predict an unexpected behavior of the relaxation times. We find, based on saturation ESR measurements, that $T_1$ is markedly different from $T_2$. Spins injected with perpendicular polarization with respect to the graphene plane have an extraordinarily long lifetime of $100$ ns at room temperature. This is ten times more than in the best graphene samples. The spin diffusion length across graphite planes is thus expected to be ultralong, on the scale of $sim 70~mu$m, suggesting that thin films of graphite — or multilayer AB graphene stacks — can be excellent platforms for spintronics applications compatible with 2D van der Waals technologies. Finally, we provide a qualitative account of the observed spin relaxation based on the anisotropic spin admixture of the Bloch states in graphite obtained from density functional theory calculations.

Published : "arXiv Mesoscale and Nanoscale Physics".

Existence of nodal-arc and its evolution into Weyl-nodes in the presence of spin-orbit coupling in TaAs & TaP. (arXiv:2305.15432v1 [cond-mat.mes-hall])

2023-05-28T08:31:56+00:00May 28th, 2023|Categories: Publications|Tags: |

In this work, we report the existence of nodal-arc, which acts as the building block of all the nodal-rings in TaAs & TaP. This nodal-arc is found to be capable of generating all the nodal-rings in these materials upon the application of space-group symmetry operations including time-reversal symmetry. The arcs are obtained to be dispersive with the energy spread of $sim$109 ($sim$204) meV in TaAs (TaP). Also, the orbitals leading to bands-inversion and thus the formation of nodal-arcs are found to be Ta-5d & As-4p (P-3p) in TaAs (TaP). The area of nodal-rings is found to be highly sensitive to the change in hybridization-strength, where the increase in hybridization-strength leads to the decrease in the area of nodal-rings. In the presence of spin-orbit coupling (SOC), all the points on these arcs get gaped-up and two pairs of Weyl-nodes are found to evolve from them. Out of the two pair, one is found to be situated close to the joining point of the two arcs forming a ring. This causes the evolution of each nodal-ring into three pairs of Weyl-nodes. The coordinates of these Weyl-nodes are found to be robust to the increase in SOC-strength from $sim$ 0.7-3.5 eV. All the results are obtained at the first-principle level. This work provides a clear picture of the existence of nodal-arc due to accidental degeneracy and its evolution into Weyl-nodes under the effect of SOC.

Published : "arXiv Mesoscale and Nanoscale Physics".

Existence of nodal-arc and its evolution into Weyl-nodes in the presence of spin-orbit coupling in TaAs & TaP. (arXiv:2305.15432v1 [cond-mat.mes-hall])

2023-05-28T08:31:56+00:00May 28th, 2023|Categories: Publications|Tags: |

In this work, we report the existence of nodal-arc, which acts as the building block of all the nodal-rings in TaAs & TaP. This nodal-arc is found to be capable of generating all the nodal-rings in these materials upon the application of space-group symmetry operations including time-reversal symmetry. The arcs are obtained to be dispersive with the energy spread of $sim$109 ($sim$204) meV in TaAs (TaP). Also, the orbitals leading to bands-inversion and thus the formation of nodal-arcs are found to be Ta-5d & As-4p (P-3p) in TaAs (TaP). The area of nodal-rings is found to be highly sensitive to the change in hybridization-strength, where the increase in hybridization-strength leads to the decrease in the area of nodal-rings. In the presence of spin-orbit coupling (SOC), all the points on these arcs get gaped-up and two pairs of Weyl-nodes are found to evolve from them. Out of the two pair, one is found to be situated close to the joining point of the two arcs forming a ring. This causes the evolution of each nodal-ring into three pairs of Weyl-nodes. The coordinates of these Weyl-nodes are found to be robust to the increase in SOC-strength from $sim$ 0.7-3.5 eV. All the results are obtained at the first-principle level. This work provides a clear picture of the existence of nodal-arc due to accidental degeneracy and its evolution into Weyl-nodes under the effect of SOC.

Published : "arXiv Mesoscale and Nanoscale Physics".

The Casimir effect for stack of graphenes. (arXiv:2304.09143v1 [cond-mat.mes-hall])

2023-04-19T04:31:27+00:00April 19th, 2023|Categories: Publications|Tags: , |

We consider a stack of parallel sheets composed of conducting planes with tensorial conductivities. Using the scattering matrix approach, we derive explicit formulas for the Casimir energy of two, three, and four planes, as well as a recurrence relation for arbitrary planes. Specifically, for a stack of graphene, we solve the recurrence relations and obtain formulas for the Casimir energy and force acting on the planes within the stack. Moreover, we calculate the binding energy in the graphene stack with graphite interplane separation, which amounts to $E_{ib} = 9.9$ meV/atom. Notably, the Casimir force on graphene sheets decreases rapidly for planes beyond the first one. In particular, for the second graphene layer in the stack, the force is $35$ times smaller than that experienced by the first layer.

Published : "arXiv Mesoscale and Nanoscale Physics".

Quadriexciton binding energy in electron-hole bilayers. (arXiv:2304.09018v1 [cond-mat.str-el])

2023-04-19T04:31:25+00:00April 19th, 2023|Categories: Publications|Tags: , |

Excitonic condensation and superfluidity have recently received a renewed attention, due to the fabrication of bilayer systems in which electrons and hole are spatially separated and form stable pairs known as indirect excitons. Dichalcogenides- and graphene- based bilayers are nowadays built and investigated, giving access to systems with (i) only spin degeneracy, (ii) spin and valley degeneracy. Simulation studies performed in the last decade at $T=0$ for simple, model electron-hole bilayers, as function of inter-layer distance and in-layer carrier density, have revealed in case (i) the formation of biexcitons in a tiny region of parameter space and in case (ii) the formation of stable compounds made of 4 electrons and 4 holes (quadriexcitons) in a sizable region of parameter space. Of some interest is the relation of the properties of isolated biexcitons (quadriexcitons) and those of their finite density counterpart. In fact, the isolated biexciton has been repeatedly studied in the last years with simulations and other techniques. No simulations, instead, are available to our knowledge for the isolated quadriexciton, for which we present here results of the first quantum Monte Carlo (QMC) study. Stability with respect to the dissociation into biexcitons, and the pair correlations with varying the inter-layer distance $d$ are discussed.

Published : "arXiv Mesoscale and Nanoscale Physics".

Anisotropic linear and non-linear excitonic optical properties of buckled monolayer semiconductors. (arXiv:2304.08951v1 [cond-mat.mes-hall])

2023-04-19T04:31:23+00:00April 19th, 2023|Categories: Publications|

The optical properties of two-dimensional materials are exceptional in several respects. They are highly anisotropic and frequently dominated by excitonic effects. Dipole-allowed second order non-linear optical properties require broken inversion symmetry. Hence, several two-dimensional materials show strong in-plane (IP) non-linearity but negligible out-of-plane (OOP) response due to vertical symmetry. By considering buckled hexagonal monolayers, we analyze the critical role of broken vertical symmetry on their excitonic optical response. Both linear as well as second order shift current and second harmonic response are studied. We demonstrate that substantial OOP non-linear response can be obtained, in particular, through off-diagonal tensor elements coupling IP excitation to OOP response. Our findings are explained by excitonic selection rules for OOP response and the impact of dielectric screening on excitons is elucidated.

Published : "arXiv Mesoscale and Nanoscale Physics".

Defects in Graphene : A Topological Description. (arXiv:2304.08905v1 [cond-mat.mes-hall])

2023-04-19T04:31:21+00:00April 19th, 2023|Categories: Publications|Tags: |

Specific types of spatial defects or potentials can turn monolayer graphene into a topological material. These topological defects are classified by a spatial dimension $D$ and they are systematically obtained from the Hamiltonian by means of its symbol $mathcal{H} (boldsymbol{k}, boldsymbol{r}) $, an operator which generalises the Bloch Hamiltonian and contains all topological information. This approach, when applied to Dirac operators, allows to recover the tenfold classification of insulators and superconductors. The existence of a stable $mathbb{Z}$-topology is predicted as a condition on the dimension $D$, similar to the classification of defects in thermodynamic phase transitions. Kekule distortions, vacancies and adatoms in graphene are proposed as examples of such defects and their topological equivalence is discussed.

Published : "arXiv Mesoscale and Nanoscale Physics".

Feedback enhanced Dyakonov-Shur instability in Graphene-FET. (arXiv:2304.08900v1 [cond-mat.mes-hall])

2023-04-19T04:31:19+00:00April 19th, 2023|Categories: Publications|Tags: |

Graphene devices are known to have the potential to operate THz signals. In particular, graphene field-effect transistors have been proposed as devices to host plasmonic instabilities in the THz realm; for instance, Dyakonov-Shur instability which relies upon dc excitation. In this work, starting from a hydrodynamical description of the charge carriers, we extend the transmission line description of graphene field-effect transistors to a scheme with a positive feedback loop, also considering the effects of delay, which leads to the transcendental transfer function with terms of the form $e^{as}{rm sech}^k(s)/s$. Applying the conditions for the excitation of Dyakonov-Shur instability, we report an enhanced voltage gain in the linear regime that is corroborated by our simulations of the nonlinear hydrodynamic model for the charge carriers. This translates to both greater saturation amplitude — often up to 50% increase — and fastest growth rate of the self-oscillations. Thus, we bring forth a prospective concept for the realization of a THz oscillator suitable for future plasmonic circuitry.

Published : "arXiv Mesoscale and Nanoscale Physics".

Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance. (arXiv:2304.08858v1 [cond-mat.mes-hall])

2023-04-19T04:31:17+00:00April 19th, 2023|Categories: Publications|

The interlayer antiferromagnetic coupling rare-earth/transition-metal bilayer ferrimagnet systems have attracted much attention because they present variously unusual temperature-and field-dependent nontrivial magnetic states and dynamics. These properties and the implementation of their applications in spintronics highly depend on the significant temperature dependence of the magnetic exchange stiffness constant A. Here, we quantitatively determine the temperature dependence of magnetic exchange stiffness A_{Py-Gd} and A_{Gd} in the artificially layered ferrimagnet consisting of a Py/Gd bilayer, using a measurement of anisotropic magnetoresistance (AMR) of the bilayer thin film at different temperatures and magnetic fields. The obtained temperature dependence of A_{Py-Gd} and A_{Gd} exhibit a scaling power law with the magnetization of Gd. The critical field of spin-flop transition and its temperature dependence can also be directly obtained by this method. Additionally, the experimental results are well reproduced by micromagnetic simulations with the obtained parameters A_{Py-Gd} and A_{Gd}, which further confirms the reliability of this easily accessible technique.

Published : "arXiv Mesoscale and Nanoscale Physics".

Quantum Interference Enhances the Performance of Single-Molecule Transistors. (arXiv:2304.08535v1 [physics.chem-ph])

2023-04-19T04:31:14+00:00April 19th, 2023|Categories: Publications|Tags: , |

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.

Published : "arXiv Mesoscale and Nanoscale Physics".

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