Solid State Communications

/Solid State Communications

Editor’s Choice 2016: Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization

2017-07-11T14:28:51+00:00July 11th, 2017|Categories: Publications|Tags: |

This paper presents a coherent picture for understanding transport measurements on current topological insulator (TI) materials such as those based on Bi2Se3 and Bi2Te3. The authors conclude that transport measurements on TI materials are often more complex than non-TI materials due to the various topological and non- topological transport channels that are simultaneously present. The presented results highlight the difficulties in achieving a TI that is insulating in the bulk at finite temperatures. The conclusions point out that fine-tuning of disorder, band bending and weak-anti-localization could lead to creation of TI state that is insulating in the bulk.

Published in: "Solid State Communications".

Editor’s Choice 2016: Measurement of high exciton binding energy in monolayer transition-metal dichalcogenides WS2 and WSe2

2017-07-11T14:28:51+00:00July 11th, 2017|Categories: Publications|Tags: , , |

There is currently great interest in developing understanding of optical properties of monolayers of transition-metal dichalcogenidtes(TMDCs). Is the optical absorption at room temperatures determined by excitons or valence to conduction band transitions? What is the bandgap of these materials? Hanbicki et al. report here absorption measurements on single layers of WS2 and WSe2. They identify contribution from ground and excited exciton states up to room temperature. This allows them to estimate the onset of continuum and determine the bandgap. This is an important contribution to our understanding of optical properties of TMDCs.

Published in: "Solid State Communications".

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