Antimonene

/Tag: Antimonene

Gate-tunable infrared plasmons in electron-doped single-layer antimony

2018-11-09T16:34:02+00:00November 9th, 2018|Categories: Publications|Tags: |

Author(s): D. A. Prishchenko, V. G. Mazurenko, M. I. Katsnelson, and A. N. RudenkoWe report on a theoretical study of collective electronic excitations in single-layer antimony crystals (antimonene), a novel two-dimensional semiconductor with strong spin-orbit coupling. Based on a tight-binding model, we consider electron-doped antimonene and demonstrate that the combination of s…[Phys. Rev. B 98, 201401(R)] Published Fri Nov 09, 2018

Published in: "Physical Review B".

Testing topological protection of edge states in hexagonal quantum spin Hall candidate materials

2018-10-23T16:34:39+00:00October 23rd, 2018|Categories: Publications|Tags: , |

Author(s): Fernando Dominguez, Benedikt Scharf, Gang Li, Jörg Schäfer, Ralph Claessen, Werner Hanke, Ronny Thomale, and Ewelina M. HankiewiczWe analyze the detailed structure of topological edge mode protection occurring in hexagonal quantum spin Hall (QSH) materials. We focus on bismuthene, antimonene, and arsenene on a SiC substrate, which, due to their large bulk gap, may offer new opportunities for room-temperature QSH applications. …[Phys. Rev. B 98, 161407(R)] Published Tue Oct 23, 2018

Published in: "Physical Review B".

Plasmon spectrum of single-layer antimonene

2018-10-10T16:33:08+00:00October 10th, 2018|Categories: Publications|Tags: , |

Author(s): Guus Slotman, Alexander Rudenko, Edo van Veen, Mikhail I. Katsnelson, Rafael Roldán, and Shengjun YuanThe collective excitation spectrum of two-dimensional (2D) antimonene is calculated beyond the low-energy continuum approximation. The dynamical polarizability is computed using a six-orbital tight-binding model that properly accounts for the band structure of antimonene in a broad energy range. Ele…[Phys. Rev. B 98, 155411] Published Wed Oct 10, 2018

Published in: "Physical Review B".

Plasmon Spectrum of Single Layer Antimonene. (arXiv:1809.09214v1 [cond-mat.mes-hall])

2018-09-26T02:29:23+00:00September 26th, 2018|Categories: Publications|Tags: , |

The collective excitation spectrum of two-dimensional (2D) antimonene is calculated beyond the low energy continuum approximation. The dynamical polarizability is computed using a 6-orbitals tight-binding model that properly accounts for the band structure of antimonene in a broad energy range. Electron-electron interaction is considered within the random phase approximation. The obtained spectrum is rich, containing the standard intra-band 2D plasmon and a set of single inter-band modes. We find that spin-orbit interaction plays a fundamental role in the reconstruction of the excitation spectrum, with the emergence of novel inter-band branches in the continuum that interact with the plasmon.

Published in: "arXiv Material Science".

Gate-tunable infrared plasmons in electron-doped single-layer antimony. (arXiv:1808.02619v1 [cond-mat.mtrl-sci])

2018-08-09T02:29:28+00:00August 9th, 2018|Categories: Publications|Tags: |

We report on a theoretical study of collective electronic excitations in single-layer antimony crystals (antimonene), a novel two-dimensional semiconductor with strong spin-orbit coupling. Based on a tight-binding model, we consider electron-doped antimonene and demonstrate that the combination of spin-orbit effects with external bias gives rise to peculiar plasmon excitations in the mid-infrared spectral range. These excitations are characterized by low losses and negative dispersion at frequencies effectively tunable by doping and bias voltage. The observed behavior is attributed to the spin-splitting of the conduction band, which induces interband resonances, affecting the collective excitations. Our findings open up the possibility to develop novel plasmonic and optoelectronic devices with high tunability, operating in technologically relevant spectral range.

Published in: "arXiv Material Science".

Strain engineering of antimonene by a first-principles study: Mechanical and electronic properties

2018-08-06T16:34:10+00:00August 6th, 2018|Categories: Publications|Tags: |

Author(s): Devesh R. Kripalani, Andrey A. Kistanov, Yongqing Cai, Ming Xue, and Kun ZhouRecent success in the experimental isolation and synthesis of highly stable atomically thin antimonene has triggered great interest into examining its potential role in nanoelectronic applications. In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its m…[Phys. Rev. B 98, 085410] Published Mon Aug 06, 2018

Published in: "Physical Review B".

Strain Engineering of Antimonene by a First-principles Study: Mechanical and Electronic Properties. (arXiv:1807.06231v1 [cond-mat.mtrl-sci])

2018-07-18T02:29:27+00:00July 18th, 2018|Categories: Publications|Tags: |

In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its most stable beta-phase using first-principles calculations. The upper region of its valence band is found to solely consist of lone pair p-orbital states, which are by nature more delocalized than the d-orbital states in transition metal dichalcogenides, implying superior transport performance of antimonene. The Young’s and shear moduli of beta-antimonene are observed to be ~25% higher than those of bulk antimony, while the hexagonal lattice constant of the monolayer reduces significantly (~5%) from that in bulk, indicative of strong inter-layer coupling. The ideal tensile test of beta-antimonene under applied uniaxial strain highlights ideal strengths of 6 GPa and 8 GPa, corresponding to critical strains of 15% and 17% in the zigzag and armchair directions, respectively. During the deformation process, the structural integrity of the material is shown to be better preserved, albeit moderately, in the armchair direction. Interestingly, the application of uniaxial strain in the zigzag and armchair directions unveil direction-dependent trends in the electronic band structure. We find that the nature of the band gap remains insensitive to strain in the zigzag direction, while strain in the armchair direction activates an indirect-direct band gap transition at a critical strain of 4%, owing to a band switching mechanism. The curvature of the conduction band minimum increases during the transition, which suggests a lighter effective mass of electrons in the direct-gap configuration than in the free-standing state of equilibrium. The work function of free-standing beta-antimonene is

Published in: "arXiv Material Science".

Electronic structure of monolayer antimonene nanoribbons under out-of-plane and transverse bias. (arXiv:1807.04597v1 [cond-mat.mes-hall])

2018-07-13T00:30:18+00:00July 13th, 2018|Categories: Publications|Tags: |

A systematic study of the electronic properties of single layer Sb (antimonene) nanoribbons is presented. By using a 6-orbital tight-binding Hamiltonian, we study the electronic band structure of finite ribbons with zigzag or armchair termination. We show that the size of the gap and its nature (direct or indirect) depends on the width of the sample and can be controlled by applying an external bias potential. An electric field applied perpendicular to the antimonene layer is found to increase the band gap, while a transverse bias potential leads to a position dependent reduction of the band gap. Both kinds of bias potential break inversion symmetry of the crystal. This, together with the strong intrinsic spin-orbit coupling of antimonene, leads to spin-splitting of the valence band states.

Published : "arXiv Mesoscale and Nanoscale Physics".

Electron-phonon properties and superconductivity of doped antimonene. (arXiv:1806.08203v1 [cond-mat.supr-con])

2018-06-22T02:29:13+00:00June 22nd, 2018|Categories: Publications|Tags: |

Antimonene is a recently discovered two-dimensional semiconductor with exceptional environmental stability, high carrier mobility, and strong spin-orbit interactions. In combination with electric field, the latter provides an additional degree of control over the materials’ properties because of induced spin splitting. Here, we report on a computational study of electron-phonon coupling and superconductivity in $n$- and $p$-doped antimonene, where we pay a special attention on the effect of the perpendicular electric field. We find that at realistic carrier concentrations, antimonene can be turned into a state with strong electron-phonon coupling, with the mass enhancement factor $lambda$ of up to five. In this regime, antimonene is expected to be a superconductor with the critical temperature of $sim$17 K. Application of bias voltage leads to a considerable modification of the electronic structure, affecting the electron-phonon coupling in antimonene. While these effects are less obvious in case of electron-doping, field-effect in hole-doped antimonene results in a considerable variation of the critical temperature depending on bias voltage.

Published in: "arXiv Material Science".

Epitaxial growth of highly strained antimonene on Ag (111). (arXiv:1803.09865v1 [cond-mat.mtrl-sci])

2018-03-28T19:59:08+00:00March 28th, 2018|Categories: Publications|Tags: |

The synthesis of antimonene, which is a promising group-V 2D material for both fundamental studies and technological applications, remains highly challenging. Thus far, it has been synthesized only by exfoliation or growth on a few substrates. In this study, we show that thin layers of antimonene can be grown on Ag (111) by molecular beam epitaxy. High-resolution scanning tunneling microscopy combined with theoretical calculations revealed that the submonolayer Sb deposited on a Ag (111) surface forms a layer of AgSb2 surface alloy upon annealing. Further deposition of Sb on the AgSb2 surface alloy causes an epitaxial layer of Sb to form, which is identified as antimonene with a buckled honeycomb structure. More interestingly, the lattice constant of the epitaxial antimonene (5 {AA}) is much larger than that of freestanding antimonene, indicating a high tensile strain of more than 20%. This kind of large strain is expected to make the antimonene a highly promising candidate for room-temperature quantum spin Hall material.

Published in: "arXiv Material Science".

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