High‐Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS2/SWCNTs Network Van Der Waals Heterostructure
A high‐speed photoinduced memory device is achieved based on the MoS2/single‐walled carbon nanotube network mixed‐dimensional van der Waals heterostructure. It demonstrates the multibit storage capacity, and meets all needs of an ideal photoinduced memory simultaneously—a record fast program/erase operation of 32/0.4 ms, a high program/erase ratio (106), appropriate storage time (103 s), and simple program/erase operation at room temperature. Abstract Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially for high‐throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the program/erase speed is still limited to hundreds of micro‐seconds. A high‐speed photoinduced memory based on MoS2/single‐walled carbon nanotubes (SWCNTs) network mixed‐dimensional van der Waals heterostructure is demonstrated here. An intrinsic ultrafast charge transfer occurs at the heterostructure interface between MoS2 and SWCNTs (below 50 fs), therefore enabling a record program/erase speed of ≈32/0.4 ms, which is faster than that of the previous reports. Furthermore, benefiting from the unique device structure and material properties, while achieving high‐speed program/erase operation, the device can simultaneously obtain high program/erase ratio (≈106), appropriate storage time (≈103 s), record‐breaking detectivity (≈1016 Jones) and multibit storage capacity with a simple program/erase operation. It even has a potential application as a flexible optoelectronic device. Therefore, the designed concept here opens an avenue for high‐throughput fast data communications.
Published in: "Small".