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Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

2018-02-16T08:28:43+00:00 February 16th, 2018|Categories: Publications|Tags: |

Abstract Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle-dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in-plane anisotropy are in the initial stage. Here azimuth-dependent reflectance difference microscopy (ADRDM), angle-resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in-plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in-plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few-layer GeAs field-effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high-performance devices and the results suggest a general methodology for characterizing the in-plane anisotropy of low-symmetry 2D materials. Here the in-plane anisotropic optical and electrical properties of low-symmetry 2D layered GeAs are reported by combining the polarized Raman spectra, azimuth-dependent reflectance difference microscopy, and angle-resolved electrical transport measurements with related theoretical calculations.

Published in: "Advanced Functional Materials".

Fully printed high performance humidity sensors based on two-dimensional materials

2018-02-15T14:24:25+00:00 February 15th, 2018|Categories: Publications|Tags: , , |

Nanoscale, 2018, Accepted ManuscriptDOI: 10.1039/C7NR08115D, PaperPei He, Jack Robert Brent, Hui Ding, Jinxin Yang, David J Lewis, Paul O’Brien, Brian DerbyFully printed humidity sensors based on two dimensional (2D) materials are described. Monolayer graphene oxide (GO) and few-layered black phosphorus (BP) flakes were

Published in: "RSC Nanoscale".

Electronic properties of phosphorene nanoribbons with nanoholes

2018-02-15T10:29:04+00:00 February 15th, 2018|Categories: Publications|Tags: |

RSC Adv., 2018, 8,7486-7493DOI: 10.1039/C7RA12351E, Paper Open Access &nbsp This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Lin Sun, Zhen Hua Zhang, Hao Wang, Mo LiUsing first-principles calculation based on density-functional theory, the electronic properties of monolayer black phosphorus nanoribbons

Published in: "RSC Advances".

Exploration of two-dimensional bio-functionalized phosphorene nanosheets (black phosphorous) for label free haptoglobin electro-immunosensing applications

2018-02-14T12:29:46+00:00 February 14th, 2018|Categories: Publications|Tags: |

We report on the development of an antibody-functionalized interface based on electrochemically active liquid-exfoliated two-dimensional phosphorene (Ph) nanosheets—also known as black phosphorous nanosheets—for the label-free electrochemical immunosensing of a haptoglobin (Hp) biomarker, a clinical marker of severe inflammation. The electrodeposition has been achieved over the screen-printed electrode (SPE) using liquid-assisted ultrasonically exfoliated black phosphorus nanosheets. Subsequently, Ph-SPEs bioconjugated with Hp antibodies (Ab), using electrostatic interactions via a poly-L-lysine linker for biointerface development. Electrochemical analysis demonstrates that the Ab-modified Ph-SPEs ([email protected]) exhibit enhanced electroconducting behavior as compared to the pristine electrodes. This Ab-functionalized phosphorene-based electrochemical immunosensor platform has demonstrated remarkable sensitivity and specificity, having a dynamic linear response range from 0.01–10 mg…

Published in: "Nanotechnology".

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures. (arXiv:1802.03508v1 [cond-mat.mtrl-sci])

2018-02-13T19:59:26+00:00 February 13th, 2018|Categories: Publications|Tags: , |

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zrn+1CnT2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/{AA} electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

Published in: "arXiv Material Science".

Quantum transport in defective phosphorene nanoribbons: Effects of atomic vacancies

2018-02-13T16:30:31+00:00 February 13th, 2018|Categories: Publications|Tags: |

Author(s): L. L. Li and F. M. PeetersDefects are almost inevitably present in realistic materials and defective materials are expected to exhibit very different properties than their nondefective (perfect) counterparts. Here, using a combination of the tight-binding approach and the scattering matrix formalism, we investigate the elect…[Phys. Rev. B 97, 075414] Published Tue Feb 13, 2018

Published in: "Physical Review B".

Density functional theory calculations for evaluation of phosphorene as a potential anode material for magnesium batteries

2018-02-13T10:28:59+00:00 February 13th, 2018|Categories: Publications|Tags: |

RSC Adv., 2018, 8,7196-7204DOI: 10.1039/C7RA12400G, Paper Open Access &nbsp This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.Xinpeng Han, Cheng Liu, Jie Sun, Austin D. Sendek, Wensheng YangPhosphorene adsorbs Mg to form a stable product MgP2, delivering a theoretical specific

Published in: "RSC Advances".

Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

2018-02-13T08:31:27+00:00 February 13th, 2018|Categories: Publications|Tags: , |

Abstract With the Moore’s law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm–1. Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human–machine interfacing, data processing and transmission. A tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor, black phosphorus transistors, and a sliding mode triboelectric nanogenerator (TENG) is reported. Triboelectric potential produced from the TENG can efficiently drive the transistors and inverters without applying gate voltages. Tunable electrical behaviors of the inverters are also realized, including tunable gains and power consumptions.

Published in: "Advanced Materials".

Tuning the electronic transport anisotropy in <i>α</i>-phase phosphorene through superlattice design

2018-02-12T18:30:26+00:00 February 12th, 2018|Categories: Publications|Tags: |

Author(s): Yuanyuan He, Shiyun Xiong, Feifei Xia, Zhibin Shao, Jianwei Zhao, Xiujuan Zhang, Jiansheng Jie, and Xiaohong ZhangRational tuning the anisotropic electronic properties of monolayer phosphorene is essential to their applications in electronic and optoelectronic devices. By combining the density functional theory and the nonequilibrium Green’s function method, we developed a strategy to tune the anisotropic trans…[Phys. Rev. B 97, 085119] Published Mon Feb 12, 2018

Published in: "Physical Review B".

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