2D Research

Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions (Adv. Mater. 6/2019)

In article number 1805656, Rui Chen, Liyuan Zhang, Youpin Gong, and co‐workers develop an h‐BN/MoTe2/graphene/SnS2/h‐BN van der Waals heterostructure to realize an ultrahigh‐sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high‐efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.

Published in: "Advanced Materials".

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