Scientists from the Chinese Academy of Sciences and the Collaborative Innovation Center of Quantum Matter in Beijing demonstrate growth of telluride films on graphene.
The experiments were performed in ultra-high vacuum, with graphene being prepared by thermal treatment of silicon carbide, followed by evaporation of tellurium at 227 °C. The resulting monolayer and few-layer films are characterised electronically and the band gap is deduced for various film thicknesses which is found to increase with decreasing thickness, up to 0.92eV for monolayer tellurium
Read more: “Epitaxial Growth and Band Structure of Te Film on Graphene” Huang et al. Nano Letters 2017
