A collaboration between Peking University, UNIST and others, demonstrate ultrafast and ultrahigh quality growth of CVD graphene.
Since the first demonstration of CVD graphene, its wider adoption and production has been hampered with numerous issues. For example, the quality of the copper substrate which serves as a substrate plays an important role in the reaction conditions which grow graphene. Graphene growth typically favours copper with larger grain sizes. However, such large grain size copper requires extensive metallurgical or chemical processing in order to be be prepared and is typically costly.
In this work, writing in arXiv, the authors demonstrate how industrial copper foil can be engineered by an annealing step in order to convert it to a single crystal. The combination of engineered copper and an oxygen-assisted growth process, results in graphene films with superior mobility and low sheet resistance.
Read more: “Ultrafast Epitaxial Growth of Metre-Sized Single-Crystal Graphene on Industrial Cu Foil”
