High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

2015-10-08T16:15:57+00:00October 8th, 2015|Categories: Publications|Tags: |

We present graphene nanowires implemented as dispersion free self switched microwave diode detectors. The microwave properties of the detectors are investigated using vector corrected large signal measurements in order to determine the detector responsivity and noise equivalent power (NEP) as a function of frequency, input power, and device geometry. We identify two distinct conductance nonlinearities which generate detector responsivity: an edge effect nonlinearity near zero bias due to lateral gating of the nanowire structures, and a velocity saturation nonlinearity which generates current compression at high power levels. The scaling study shows that detector responsivity obeys an exponential scaling law with respect to nanowire width, and a peak responsivity (NEP) of 250 V/W (50 pW/ ) is observed in detectors of the smallest width. The results are promising as the devices exhibit responsivities which are comparable to state of the art self switched detectors in semiconductor technologies.

Published in: "Applied Physics Letters".

Highly sensitive phototransistor based on GaSe nanosheets

2015-10-08T16:15:57+00:00October 8th, 2015|Categories: Publications|

Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high I photo/I dark (photoresponse current over dark current) ratio of almost 103.

Published in: "Applied Physics Letters".

Substrate wettability requirement for the direct transfer of graphene

2015-10-07T16:17:02+00:00October 7th, 2015|Categories: Publications|Tags: |

The direct transfer method, wherein graphene is transferred from its growth metal to a soft substrate, is widely used to fabricate various devices, and the interfacial bonding condition between the substrate and the graphene is vital for transfer success. In this letter, we present a theoretical model to derive the wettability requirements of the soft substrate to sustain the direct transfer of graphene, and verify the theoretical analysis with experiments. We find that the surface energy components of the substrate have a crucial effect upon the graphene transfer, and that substrates possessing a strong polar surface energy are not suitable for transfer. The theoretical model predicts the critical water contact angle of the soft substrate for graphene transfer to be about 50°, and the experiments measure it to be about 60°. These results provide guidelines for choosing proper substrates to transfer graphene during the fabrication of graphene-based flexible devices.

Published in: "Applied Physics Letters".

Tailoring diffuse reflectance of inhomogeneous films containing microplatelets

2015-10-06T16:17:25+00:00October 6th, 2015|Categories: Publications|Tags: |

We develop an analytical model for calculating the diffuse reflectance of inhomogeneous films containing aligned microplatelets with diameters much greater than the wavelength. The scattering parameters are derived by modeling the platelets as one-dimensional thin films, and the overall diffuse reflectance of the slab is calculated using the Kubelka-Munk model. Our model predicts that reflection minima and maxima arising from coherent interference within the platelets are preserved in the diffuse reflectance of the disordered slab. Experimental validation of the model is provided by reflectance measurements (0.3–15 μm) of a solid aerosol film of aligned hexagonal boron nitride platelets.

Published in: "Applied Physics Letters".

Space charge induced electrostatic doping of two-dimensional materials: Graphene as a case study

2015-10-06T16:17:23+00:00October 6th, 2015|Categories: Publications|Tags: |

We introduce a technique that we call Space Charge Doping for electrostatic doping of 2D materials. This technique exploits the presence of mobile ionic species in glass to induce a charge imbalance at the glass-material interface. Ionic mobility in glass is species dependent and also dependent on the temperature and the applied electric field. Mobility of positive sodium ions is increased by heating and an applied electric field causes ion drift. The polarity of the electric field results in accumulation or depletion of sodium ions at the glass surface inducing, respectively, electron or hole doping in the material placed on the surface, in this case graphene. Extremely high doping levels are reached ( ) without compromising graphene quality and with reversibility, bipolarity, and stability in time.

Published in: "Applied Physics Letters".

Creating periodic local strain in monolayer graphene with nanopillars patterned by self-assembled block copolymer

2015-10-06T16:17:21+00:00October 6th, 2015|Categories: Publications|Tags: |

A simple and viable method was developed to produce biaxial strain in monolayer graphene on an array of SiO2 nanopillars. The array of SiO2 nanopillars (1 cm2 in area, 80 nm in height, and 40 nm in pitch) was fabricated by employing self-assembled block copolymer through simple dry etching and deposition processes. According to high resolution micro-Raman spectroscopy and atomic force microscopy analyses, 0.9% of maximum biaxial tensile strain and 0.17% of averaged biaxial tensile strain in graphene were created. This technique provides a simple and viable method to form biaxial tensile strain in graphene and offers a practical platform for future studies in graphene strain engineering.

Published in: "Applied Physics Letters".

Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred on transparent substrates

2015-10-01T14:16:42+00:00October 1st, 2015|Categories: Publications|Tags: |

We have investigated the second-order nonlinear optical (NLO) properties of CVD-grown MoS2 monolayer (ML) transferred onto transparent substrates such as fused silica and polyethylene terephthalate. The physical properties of the transferred MLs were characterized by optical and NLO methods. We measured the second-order susceptibility in the spectral range of 1064–1600 nm in which the corresponding second harmonic radiation resonates with the exciton levels. It was found that is strongly enhanced by up to a factor of 5 near the A- and B-exciton levels due to two-photon resonance. The absolute values of our samples determined by both reflection and transmission geometry are on par with that of as-grown MLs. Our results imply that the cavity-confinement scheme can be employed for maximizing the nonlinear optical efficiency of atomically thin transition metal dichalcogenides for transparent/flexible optoelectronics applications, especially when oriented stacking of transferred MLs are controllable.

Published in: "Applied Physics Letters".

Thermal management in MoS2 based integrated device using near-field radiation

2015-10-01T14:16:40+00:00October 1st, 2015|Categories: Publications|Tags: , |

Recently, wafer-scale growth of monolayer MoS2 films with spatial homogeneity is realized on SiO2 substrate. Together with the latest reported high mobility, MoS2 based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS2, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS2 to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS2 and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS2 sheet. Therefore, an efficient thermal management strategy for MoS2 integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS2 device; heat energy transfer from MoS2 to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

Published in: "Applied Physics Letters".

Enhancement of humidity sensitivity of graphene through functionalization with polyethylenimine

2015-09-30T14:16:39+00:00September 30th, 2015|Categories: Publications|Tags: |

In this work, we show that the sensing performance of graphene based humidity sensors can be largely improved through polymer functionalization. Chemical vapor deposited graphene is functionalized with amine rich polymer, leading to electron transfer from amine groups in the polymer to graphene. The functionalized graphene humidity sensor has demonstrated good sensitivity, recovery, and repeatability. Charge transfer between the functionalized graphene and water molecules and the sensing mechanism are studied systemically using field effect transistor geometry and scanning Kelvin probe microscopy.

Published in: "Applied Physics Letters".

Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide

2015-09-29T16:16:42+00:00September 29th, 2015|Categories: Publications|Tags: |

We report on room temperature detection of terahertz radiation by means of antenna-coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon carbide. The achieved photoresponsivity (∼0.25 V/W) and noise equivalent power (∼80 nW/ ) result from the combined effect of two independent detection mechanisms: over-damped plasma wave rectification and thermoelectric effects, the latter ascribed to the presence of carrier density junctions along the FET channel. The calculated plasmonic and thermoelectric response reproduces qualitatively well the measured photovoltages; the experimentally observed sign-switch demonstrates the stronger contribution of plasmonic detection compared to the thermoelectric one. These results unveil the potential of plasmonic detectors exploiting epitaxial graphene on silicon carbide for fast large area imaging of macroscopic samples.

Published in: "Applied Physics Letters".

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

2015-09-29T16:16:39+00:00September 29th, 2015|Categories: Publications|Tags: |

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

Published in: "Applied Physics Letters".

Low-energy electron holographic imaging of individual tobacco mosaic virions

2015-09-28T16:17:46+00:00September 28th, 2015|Categories: Publications|Tags: |

Modern structural biology relies on Nuclear Magnetic Resonance (NMR), X-ray crystallography, and cryo-electron microscopy for gaining information on biomolecules at nanometer, sub-nanometer, or atomic resolution. All these methods, however, require averaging over a vast ensemble of entities, and hence knowledge on the conformational landscape of an individual particle is lost. Unfortunately, there are now strong indications that even X-ray free electron lasers will not be able to image individual molecules but will require nanocrystal samples. Here, we show that non-destructive structural biology of single particles has now become possible by means of low-energy electron holography. As an example, individual tobacco mosaic virions deposited on ultraclean freestanding graphene are imaged at 1 nm resolution revealing structural details arising from the helical arrangement of the outer protein shell of the virus. Since low-energy electron holography is a lens-less technique and since electrons with a deBroglie wavelength of approximately 1 Å do not impose radiation damage to biomolecules, the method has the potential for Angstrom resolution imaging of single biomolecules.

Published in: "Applied Physics Letters".

Nanoscale phase change memory with graphene ribbon electrodes

2015-09-25T16:16:06+00:00September 25th, 2015|Categories: Publications|Tags: |

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene “edge” contacts enable switching with threshold voltages as low as ∼3 V, low programming currents (μA SET and μA RESET) and OFF/ON resistance ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices.

Published in: "Applied Physics Letters".

Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC

2015-09-23T16:15:56+00:00September 23rd, 2015|Categories: Publications|Tags: |

We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphene layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.

Published in: "Applied Physics Letters".

Magneto-optic transmittance modulation observed in a hybrid graphene–split ring resonator terahertz metasurface

2015-09-22T16:17:16+00:00September 22nd, 2015|Categories: Publications|Tags: |

By placing a material in close vicinity of a resonant optical element, its intrinsic optical response can be tuned, possibly to a wide extent. Here, we show that a graphene monolayer, spaced a few tenths of nanometers from a split ring resonator metasurface, exhibits a magneto-optical response which is strongly influenced by the presence of the metasurface itself. This hybrid system holds promises in view of thin optical modulators, polarization rotators, and nonreciprocal devices, in the technologically relevant terahertz spectral range. Moreover, it could be chosen as the playground for investigating the cavity electrodynamics of Dirac fermions in the quantum regime.

Published in: "Applied Physics Letters".

A WSe2/MoSe2 heterostructure photovoltaic device

2015-09-22T16:17:14+00:00September 22nd, 2015|Categories: Publications|Tags: , , , |

We report on the photovoltaic effect in a WSe2/MoSe2 heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 104. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe2/MoS2 heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.

Published in: "Applied Physics Letters".

Enhanced field emission of plasma treated multilayer graphene

2015-09-22T16:17:13+00:00September 22nd, 2015|Categories: Publications|Tags: |

Electron emission properties of multilayer graphene (MLG) prepared by a facile exfoliation technique have been studied. Effect of CO2 Ar, N2, plasma treatment was studied using Raman spectroscopy and investigated for field emission based application. The CO2 plasma treated multilayer graphene shows an enhanced field emission behavior with a low turn on field of 0.18 V/μm and high emission current density of 1.89 mA/cm2 at an applied field of 0.35 V/μm. Further the plasma treated MLG exhibits excellent current stability at a lower and higher emission current value.

Published in: "Applied Physics Letters".

MoS2 oxygen sensor with gate voltage stress induced performance enhancement

2015-09-21T16:16:16+00:00September 21st, 2015|Categories: Publications|Tags: |

Two-dimensional (2D) materials have recently attracted wide attention and rapidly established themselves in various applications. In particular, 2D materials are regarded as promising building blocks for gas sensors due to their high surface-to-volume ratio, ease in miniaturization, and flexibility in enabling wearable electronics. Compared with other 2D materials, MoS2 is particularly intriguing because it has been widely researched and exhibits semiconducting behavior. Here, we have fabricated MoS2 resistor based O2 sensors with a back gate configuration on a 285 nm SiO2/Si substrate. The effects of applying back gate voltage stress on O2 sensing performance have been systematically investigated. With a positive gate voltage stress, the sensor response improves and the response is improved to 29.2% at O2 partial pressure of 9.9 × 10−5 millibars with a +40 V back-gate bias compared to 21.2% at O2 partial pressure of 1.4 × 10−4 millibars without back-gate bias; while under a negative gate voltage stress of −40 V, a fast and full recovery can be achieved at room temperature. In addition, a method in determining O2 partial pressure with a detectability as low as 6.7 × 10−7 millibars at a constant vacuum pressure is presented and its potential as a vacuum gauge is briefly discussed.

Published in: "Applied Physics Letters".

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