Bi2Se3

Three-dimensional topological insulators (TIs) attract much attention due to its topologically protected Dirac surface states. Doping into TIs or their proximity with normal superconductors can promote the realization of topological superconductivity(SC) and Majorana fermions with potential applications in quantum computations. Here, an emergent superconductivity was observed in local mesoscopic point-contacts on the topological insulator Bi2Se3 by applying a voltage pulse through the contacts, evidenced by the Andreev reflection peak in the point-contact spectra and a visible resistance drop in the four-probe electrical resistance measurements. More intriguingly, the superconductivity can be erased with thermal cycles by warming up to high temperatures (300 K) and induced again by the voltage pulse at the base temperature (1.9 K), suggesting a significance for designing new types of quantum devices. Nematic behaviour is also observed in the superconducting state, similar to the case of CuxBi2Se3 as topological superconductor candidates.

Published in: "arXiv Material Science".

Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D conduction path clearly emerges in Co3Sn2S2 thin films, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which is rather thicker than 5 nm in topological insulator Bi2Se3. This large value may come from the narrow gap at Weyl point and relatively weak spin-orbit interaction of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices.

Published in: "arXiv Material Science".

Similar to light polarization that is selected by a superposition of optical basis, electron spin direction can be controlled through a superposition of spin basis. We investigate such a spin interference occurring in photoemission of the spin-orbit coupled surface state in Bi2Se3 by using spin- and angle-resolved photoemission spectroscopy combined with laser light source (laser-SARPES). Our laser-SARPES with three-dimensional spin detection and tunable laser polarization including elliptical and circular polarization enables us to directly visualize how the direction of the fully-polarized photoelectron spin changes according to the optical phase and orientation of the incident laser polarization. By this advantage of our laser-SARPES, we demonstrate that such optical information can be projected to the three-dimensional spin vector of the photoelectrons. Our results, therefore, present a novel spin-polarized electron source permitting us to optically control the pure spin state pointing to the arbitrary direction.

Published in: "arXiv Material Science".

As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the coupling with its topological phase. It is essential to measure with a time scale smaller than picoseconds for initial interaction. Here we use an X-ray free-electron laser to perform time-resolved diffraction to study ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory (DFT) and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insight into instantaneous topological phases on ultrafast timescales.

Published in: "arXiv Material Science".

We report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of 14Tesla. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR) of around 380 percent at a magnetic field of 14T and a temperature of 5K. The Hikami Larkin Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 Tesla, suggesting that the role of surface driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5 to 200K) and applied magnetic fields (up to 14Tesla).

Published in: "arXiv Material Science".

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3.

Published in: "arXiv Material Science".

Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing phase-alternating topological AB oscillations. Moreover, the ensemble-averaged fast Fourier transform analysis on the Vg dependent MC curves indicates the suppression of the quantum interference oscillation amplitudes near the Dirac point, which is attributed to the suppression of the phase coherence length within the low carrier density region. The weak antilocalization analysis on the perpendicular MC curves confirms the idea of the suppressed coherence length near the Dirac point in the TI NR.

Published in: "arXiv Material Science".

The anomalous Hall effect (AHE) is explored in the Fe78Si9B13 metallic glasses (MGs). We find that anomalous Hall conductivity depends linearly on the magnetization with a proportionality . Normalized by , ( ) is almost a constant independent on temperature or longitudinal conductivity ( ), and correspondingly anomalous Hall resistivity ( ) can be explained by , indicating the anomalous Hall coefficient . These results corroborate that dissipationless intrinsic contribution dominates the AHE in Fe78Si9B13 MGs. The maximum anomalous Hall conductivity and anomalous Hall angle ( ) are 616 and 7.4%, respectively, which are comparable to some candidate magnetic topological semimetals. Combining with the recent discover of the Dirac-like cone state in the amorphous Bi2Se3 [arXiv:1910.13412 (2019)], we suggest this large AHE may originate from some topological properties like Weyl points near Fermi level inherited from ferromagnetic elementary Fe predicted theoretically as a Weyl metal. Our results demonstrate the AHE in the Fe78Si9B13 MGs comes from intrinsic mechanism, implying that a magnetic topological semimetal or metal may exist in an amorphous system.

Published in: "arXiv Material Science".