By Z. Y. Zhang, D. Z. Yang, D. S. Xue, M. S. Si, G. P. Zhang
We demonstrate few-layer arsenene similar to phosphorene, which are derived
from the or- thorhombic bulk arsenic but are thermally stable, semiconducting
and of high carrier mobility. Although its monolayer is an indirect bandgap
semiconductor, which is dominated by the mutual competition between the
intarlayer bond parameters R1 and R2, the indirect-direct bandgap tran- sition
is …read more
Via:: arXiv Material Science
[/fusion_builder_column][/fusion_builder_row][/fusion_builder_container]