Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulkDielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk, Published online: 08 March 2018; doi:10.1038/s41699-018-0050-xThe out-of-plane dielectric constant of transition metal dichalcogenides and h-BN is thickness-dependent, unlike their in-plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free-standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in-plane and out-of-plane directions. In h-BN, the in-plane contribution was found to be larger than its out-of-plane counterpart, and independent on the number of h-BN layers. Conversely, the out-of-plane h-BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h-BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.
Published in: "NPJ 2D Materials and Applications".