A tubular 3D‐resistive random access memory based on a rolled‐up hexagonal boron nitride (h‐BN) tube is demonstrated. Meaningfully, the tubular device exhibits forming‐free bipolar resistive switching behavior with desirable memory performance. Thus, this rolled‐up memory has great potential for increasing the data storage density, reducing the power consumption, and may be applied in the fields of sensing‐storage integration. Abstract Due to their advantages compared with planar structures, rolled‐up tubes have been applied in many fields, such as field‐effect transistors, compact capacitors, inductors, and integrative sensors. On the other hand, because of its perfect insulating nature, ultrahigh mechanical strength and atomic thickness property, 2D hexagonal boron nitride (h‐BN) is a very suitable material for rolled‐up memory applications. In this work, a tubular 3D resistive random access memory (RRAM) device based on rolled‐up h‐BN tube is realized, which is achieved by self‐rolled‐up technology. The tubular RRAM device exhibits bipolar resistive switching behavior, nonvolatile data storage ability, and satisfactorily low programming current compared with other 2D material‐based RRAM devices. Moreover, by releasing from the substrate, the footprint area of the tubular device is reduced by six times. This tubular RRAM device has great potential for increasing the data storage density, lowering the power consumption, and may be applied in the fields of rolled‐up systems and sensing‐storage integration.
Published in: "Small".