Theoretical studies have shown that new physical properties such as tunable gap openings or quantum spinHall effects could be expected from group-IV graphene analogs (silicene, germanene, stanene). While therehave been numerous studies of growth of such Si, Ge, Sn monolayers, the demonstration of their hexagonalorganization has been often based on postgrowth characterization, and their analogy to graphene has remainedcontroversial. Our real-time scanning tunneling microscopy (STM) observation during Ge deposition on Ag(111)in the 380–430 K temperature range reveals that Ag atoms are involved in all the structures observed beforethe formation of a second layer, rejecting the possible formation of germanene on this substrate within theseexperimental conditions. The observation by STM of Ge atomic diffusion shows that easy exchange between Agand Ge atoms is responsible for the Ge-Ag surface alloying at such temperatures.
Published in: "arXiv Material Science".