Here, we study the surface electronic structure of 1T-VSe2 by means of angle resolved photoemission spectroscopy and uncover a dispersion-less emission located in the vicinity of the Fermi level. Its crystal momentum dependency reveals that it occupies large portions of the Brillouin zone (BZ), where no bulk band is expected. Upon electron doping (deposition of Rb-atoms), the system evolves in a surprising way. Besides the expected down-shifting of the bands, a splitting of both bulk and the dispersion-less emission is observed. This peculiar behaviour strongly suggests the intrinsic nature of this emission. Its characterization may therefore be relevant to a deeper understanding of the physics of transition metal dichalcogenides.
Published in: "arXiv Material Science".