The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Scientific Reports, Published online: 15 July 2022; doi:10.1038/s41598-022-16298-wThe non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Published in: "Scientific reports".