Recently, the in-plane thermal transport in van der Waals (vdW) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDs) has been widely studied. Whereas, the cross-plane one is far from sufficient. Based on the non-equilibrium molecular dynamics simulations and Boltzmann transport equation, here we reveal the stacking and thickness effects on the cross-plane thermal conductivity (K) of h-BN. We find that K can be significantly modulated by both the stacking structure and thickness (d) of h-BN, which is unexpected from the viewpoint of its smooth in-plane structure and weak interlayer interaction. In the small thickness region (d
Published in: "arXiv Material Science".